8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm

Abstract

Articles you may be interested inHigh power semiconductor disk laser with a semiconductor-dielectric-metal compound mirror Appl. Phys. Lett.

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

“…Applying similar design principles, but using a combination of large pump spot sizes (0.5-0.9 mm) and thin-devices on diamond submounts for heat removal, very impressive performance from ∼ 980 nm and 1060 nm SDLs have been achieved [14,46,76,77]. The highest powers recorded to-date reach 30 W at 980 nm with a multimode beam (M 2 ∼ 3) [14] and 12 W at 1060 nm with TEM 00 emission [77].…”

“…6. The first, so called "thin-device" technique, consists of transferring the thin (∼ 6 μm-thick) epitaxially-grown semiconductor gain mirror structure onto a heatsink [46][47][48]. In practice, the semiconductor growth starts with an etch-stop cap, followed by the active section and finishes with the mirror.…”

“…12 shows the tuning curves of three different SDLs operating around 645, 665 and 675 nm using 6 nm Ga 0. 46 In 0.54 P QWs, 5 nm Figure 12 (online color at: www.lpr-journal.org) Tuning curves of three red SDL gain structures (in high finesse laser cavities) designed for operation at different wavelengths. For each structure, the QW thickness and composition is indicated.…”

Heat Dissipation for High Power Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Lasers

“…Optically pumped semiconductor (OPS) vertical extemal cavity surface emitting lasers (VECSEL) have a number of advantages over conventional semiconductor diode lasers, such as high brightness and good beam quality [1,2]. High power CW operation of the OPS-VECSEL requires proper thermal design of the stmcture and efficient heat extraction from the active region to avoid thermal bnsing, decreased gain, and shut-off resulting with resonant frequency shifts.…”

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

“…Without these, temperature of the active region would rise and excited carriers would escape thermally from the quantum wells or QDs gain layer into the barrier region, thus depleting laser gain and turning the laser off in a thermal rollover process. Such a thermal dominant rollover mechanism typically limits the output power of VECSEL devices [17]. Fortunately, the configuration of VECSELs implements good heat sinking by placement of the transparent intracavity heat spreaders in direct contact with the laser gain region without thermally resistive laser mirrors in the path of heat dissipation [15,16,18], and have the inherent potential of producing very high powers by processing large 2-D arrays.…”