8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

Jhon, Hee‐Sauk; Song, Ickhyun; Jeon, Junho; Jung, Hoon; Koo, Minsuk; Park, B.-G.; Lee, J.D.; Shin, Hyungcheol

doi:10.1049/el:20081963

Cited by 25 publications

(16 citation statements)

References 4 publications

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“…There are several method frequenly used for MLNAdesign such as; wideband matching [15], switch method [16], and concurrent multiband [17][18][19]. The wideband method can produce LNA with wide frequency operating.…”

Section: Introductionmentioning

confidence: 99%

Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedance Transformer

Pramudyo

Wardoyo

Wiryadinata

et al. 2017

IJECE

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A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with r= 4.4, thickness h=1.6 mm, and tan = 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S 21 ) of 22.91 dB, 16.5 dB, 11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S 11 ) of -21.28 dB, -31.87 dB, -28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a Noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the Figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.

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Section: Introductionmentioning

confidence: 99%

Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedance Transformer

Pramudyo

Wardoyo

Wiryadinata

et al. 2017

IJECE

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“…In order to compensate for the low Q-factor of inductors, several alternative techniques employed in concurrent multiband LNAs have been reported -for instance, feedback [2] and synthetic [3] transmission lines, active notch filters [4], and feedback notch filters [5]. Among the proposed techniques, the active notch filter is an attractive solution for creating stop-bands because it can achieve a narrower and deeper stop-band notch response (high Q-factor) by compensating for the resistive loss of an inductor with its negative resistance.…”

Section: Introductionmentioning

confidence: 99%

A concurrent dual-band low-noise amplifier for K- and Ka-band applications in SiGe BiCMOS technology

Lee

Nguyen

2013

2013 Asia-Pacific Microwave Conference Proceedings (APMC)

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A 24/35-GHz BiCMOS concurrent dual-band low-noise amplifier (DBLNA) has been developed. The proposed concurrent DBLNA was designed using new active notch filters embedded into a wideband LNA. The concurrent DBLNA has measured peak gains of 21.9/16.6 dB at 23.5/35.7 GHz, respectively. The measured 3-dB bandwidths of the low and high pass-bands are 7.7 GHz (18.8-26.5 GHz) and 8.8 GHz (32.8-41.6 GHz), respectively. The best noise figures measured in the passbands are 5.1/7.2 dB at 22/35.6 GHz, respectively. The measured IIP 3 performances are -10.4/-8.3 dBm at 24/35 GHz, respectively.

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“…The concurrent receiver enables simultaneous dual-band operations in the same circuitry, and therefore it presents lower power consumption and reduced chip area. Typically, gains of concurrent LNAs are also degraded by the more of low-Q CMOS inductors in the matching networks [15], and therefore the LNAs are based on cascode topology at microwave or millimetre-wave frequencies for highgain considerations [16][17][18][19][20]. In this paper, a high-gain, low-power, and concurrent CMOS LNA based on cascode topology is designed for 2.4/5.2-GHz WLAN applications.…”

Section: Introductionmentioning

confidence: 99%

A High-Gain Cmos Lna for 2.4/5.2-GHZ Wlan Applications

Wang¹,

Huang²

2011

PIER C

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Abstract-This paper describes a high-gain CMOS low-noise amplifier (LNA) for 2.4/5.2-GHz WLAN applications. The cascode LNA uses an inductor at the common-gate transistor to increase its transconductance equivalently, and therefore it enhances the gain effectively with no additional power consumption. The LNA is matched concurrently at the two frequency bands, and the input/output matching networks are designed with two notch frequencies to shape the frequency response. The dual-band LNA with the common-gate inductor is designed, implemented, and verified in a standard 0.18-µm CMOS process. The fabricated LNA which consumes 7.2 mW features gains of 14.2 dB and 14.6 dB, and noise figures of 4.4 dB and 3.7 dB at the 2.4-GHz and 5.2-GHz frequency bands, respectively. The proposed LNA demonstrates a 4.9-7.8 dB gain enhancement compared to conventional cascode LNAs, and the chip size is 1.06 mm × 0.79 mm including all testing pads.

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8 mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

Cited by 25 publications

References 4 publications

Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedance Transformer

Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedance Transformer

A concurrent dual-band low-noise amplifier for K- and Ka-band applications in SiGe BiCMOS technology

A High-Gain Cmos Lna for 2.4/5.2-GHZ Wlan Applications

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