8-1 A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory

Kariya, N.; Tsuda, Motohiro; Kurusu, Tsutomu; Kondo, Masaki; Nishitani, K.; Tokuhira, H.; Shimokawa, J.; Yokota, Yoshinori; Tanimoto, H.; Onoue, Seiji; Shimada, Y.; Kato, Takumi; Hosotani, K.; Arai, F.; Fujiwara, M.; Uchiyama, Yohji; Ohuchi, K.

doi:10.23919/sispad49475.2020.9241626

Cited by 3 publications

(1 citation statement)

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“…The operation of a CTL cell has particularities compared to an FG cell, however, notably the nonideal programming efficiency, which translates to a slope of the incremental step pulse programming (ISPP) curve significantly below one [2]. To study these aspects of the CTL flash cell, one approach is to explicitly model the various physical mechanisms numerically [3], [4], [5], [6]. In Part I of this article, we propose such a full TCAD model and show that it is able to capture the various experimental operating regimes of CTL cells by taking into account the energy relaxation of the injected charge carriers.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Operation of Charge Trap Flash Memory—Part II: Understanding the ISPP Curve With a Semianalytical Model

Verreck,

Schanovsky,

Arreghini

et al. 2024

IEEE Trans. Electron Devices

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Flash memory with a charge trap layer (CTL), also known as silicon-oxide-nitride-oxide-silicon (SONOS), is the most common type in production, yet there is a lack of consensus on the physical modeling of its operation. In Part I, we therefore proposed a full TCAD model based on an energy relaxation approach and showed that it captures experimentally observed memory operation. This numerical model, however, comes with considerable complexity and computational cost. In Part II, we therefore construct a semianalytical model based on similar physical assumptions, called Pheido, to be as simple as possible. We first derive the model equations based on a balance of current densities, detailing the approximations made.We then use Pheido to analyze the various regimes of an experimental incremental step pulse programming (ISPP) curve and compare it to the full TCAD model derived in Part I. Finally, we investigate the impact of material and structural cell parameters on the ISPP curve, illustrating how the Pheido model offers wide utility at low computational cost.

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