75 nm T‐shaped gate for In _0.17 Al _0.83 N/GaN HEMTs with minimal short‐channel effect

Abstract

Lattice-matched InAlN/gallium nitride high electron-mobility transistors with a 6 nm-thick InAlN barrier layer were fabricated and characterised. By introducing a very thin InAlN Schottky layer, the short-channel effect could be minimised. The devices with a gate length of 75 nm exhibited output resistance as high as 56.9 Ω mm together with a drain-induced barrier lowering as low as 63 mV/V. The devices also demonstrated excellent high-frequency characteristics such as a unity current gain cutoff frequency (f T) of 170 GHz and a maximum oscillation frequency (f max) of 210 GHz.

High-Performance In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (MHEMTs) on GaAs Substrate

“…Table . 1 benchmark high-frequency characteristics and structures for the MHEMT fabricated in this paper on GaAs substrate compared to published state-of-the-art MHEMT research results. We obtain excellent L g f T of 26.1 GHz-um, which is related to excellent carrier transport properties [11], and the f T /f max of 261/304 GHz with 100 nm gate length at lower V DS = 0.5 V compared to other structures. These excellent performances are mainly attributed to well-grown In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite channel structure on GaAs substrate.…”

Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

“…Among various HEMT structures, the In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite channel HEMT on an InP substrate shows excellent high-frequency characteristics such as an f T of 421 GHz and an f max of 620 GHz because of the well-optimized fabrication process and improved carrier transport properties of the In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite channel [ 18 ]. Our fabricated mHEMT exhibits an excellent L g f T of 26.1 GHz-µm, which is related to carrier transport properties [ 19 ], and an outstanding f T /f max of 261/304 GHz with a L g of 100 nm at a V DS = 0.5 V. Although the performance of the fabricated mHEMT is not comparable to that of the In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As composite channel HEMT on an InP substrate, our fabricated mHEMT shows outstanding high-frequency characteristics compared to a single InGaAs channel HEMT on an InP substrate and other mHEMT structures because of the excellent transport properties of the composite channel on a GaAs substrate. Additionally, our fabricated device is operated at a V DS = 0.5 V, which has a lower power consumption than other group devices’ operational voltage.…”

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

“…Most of the works adopt new (In)AlN/GaN materials to suppress short-channel effects. [5,6] To reduce contact resistance, numerous approaches have been studied, such as shallow etch and ion implantation in the source/drain regions. [7,8] However, the above-mentioned methods all need hightemperature annealing.…”