75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

Patton, G.L.; Comfort, J.H.; Meyerson, B.S.; Crabbé, E.F.; Scilla, G.; Fresart, E. de; Stork, J.M.C.; Sun, J.Y.-C.; Harame, D.L.; Burghartz, Joachim N.

doi:10.1109/55.61782

Cited by 470 publications

(67 citation statements)

References 10 publications

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“…First, adjustments in the composition of the alloy enable the band structure and mobility to be easily modified [4]. Second, since Si and Ge are isovalent materials with lattice constants differing by B4%, a miscible alloy of the Si and Ge can be crystallized into a diamond lattice structure.…”

Section: Introductionmentioning

confidence: 99%

{311} Defect evolution in Si-implanted Si1−xGex alloys

Crosby

Jones

Law

et al. 2003

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

{311} Defect evolution in Si-implanted Si1−xGex alloys

Crosby

Jones

Law

et al. 2003

Materials Science in Semiconductor Processing

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“…Their usage has been demonstrated in high performance bipolar devices and a wide variety of novel electronic devices. 1,2 One way of forming the heterostructures is solid phase epitaxy in which an amorphous film of Si 1Ϫx Ge x on Si is recrystallized.…”

Section: Introductionmentioning

confidence: 99%

Composition dependence of activation energy in solid phase epitaxial growth of Si1−xGex alloys

Suh

Lee

1996

Journal of Applied Physics

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A theoretical model called the ''multibody model'' is developed for the composition dependence of the activation energy. The model that is based on the diffusion required of the recrystallization for the solid phase epitaxy does not involve any adjustable parameters and is shown to represent experimental data satisfactorily. For the Si 1Ϫx Ge x alloys that are of diamond structure, the most logical choice is the ''five-body model'' involving five atoms. The model is equally applicable to any other binary alloy.

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“…Development of SiGe HBT technology has progressed very rapidly, and is being actively pursued by a number of groups around the world [ll-231. Highlights from the evolution of SiGe HBT technology include: the first demonstration of a SiGe HBT in 1987 [Ill, the announcement of a 75 GHz f, non-self-aligned SiGe HBT in 1990 [12], and the report of a full SiGe ECL-BiCMOS technology which integrated 60 GHz f, , SiGe HBTs with state-ofthe-art 0.25 pm CMOS in 1992 [13]. In 1993, effort was aimed at exploiting the unique capabilities of SiGe HBT technology for very-high-performance analog applications, resulting in the demonstxation of a 1.0 GS/sec 12-bit digital-to-analog converter 1141.…”

Section: Introductionmentioning

confidence: 99%

Operation of SiGe bipolar technology at cryogenic temperatures

Cressler

1994

J. Phys. IV France

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Abstract:The recent introduction of silicon-germanium (SiGe) alloys has proven exceptionally promising for achieving excellent bipolar transistor performance at cryogenic temperatures, while maintaining the cost and yield advantages traditionally associated with silicon (Si) manufacturing. In this paper we review the features of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) which make them particularly suitable for cryogenic operation. Using dc and ac experimental results, we also address the issues associated with profile optimization of SiGe HBTs for the cryogenic environment, the potential for cryogenic SiGe BiCMOS technologies, and present new results on liquid-helium temperature operation of SiGe HBTs. We conclude that SiGe HBT technology offers significant leverage for future cryogenic digital, analog and mixed-signal applications requiring the highest levels of perfomlance.

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75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

Cited by 470 publications

References 10 publications

{311} Defect evolution in Si-implanted Si1−xGex alloys

{311} Defect evolution in Si-implanted Si1−xGex alloys

Composition dependence of activation energy in solid phase epitaxial growth of Si1−xGex alloys

Operation of SiGe bipolar technology at cryogenic temperatures

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