72‐3: Influence of Mobility Effect on Top‐Emission Red Quantum‐Dot Light‐Emitting Diode with Weak‐Cavity Structure

Abstract

Optimization of mobility is critical to achieving carrier balance in quantum dot light-emitting diodes (QLED) which in turn is essential for high performance devices. In this paper, our red topemitting QLED devices possess maximum current efficiency of ~25 cd/A. We find that with appropriate annealing temperature of quantum dots (QDs)/ZMO the charge transfer balance of the device can be improved. We also present a simulation results of carrier mobility V.S. device performance based on the software SETFOS from Fluxim AG. The carrier mobility simulation is agreed with the experimental results. We believe that an applicable annealing temperature is favorable to achieve carrier balance, highly efficient and color saturation devices for display applications.