71% PAE C‐band GaN power amplifier using harmonic tuning technology

Lu, Yang; Cao, Mengmeng; Wei, Jia-Xing; Zhao, Bingxuan; Ma, Xiaohua

doi:10.1049/el.2014.2092

Cited by 5 publications

(5 citation statements)

References 10 publications

(10 reference statements)

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“…This technique is very promising for the fabrication of high-quality GaN thin film that can be physically detached from the sapphire. The domain boundaries are not related to crystallographic planes, but when the polarity domain was switched oppositely from Ga-to N-polarity, domain boundaries are more preferentially formed on the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) planes, possibly due to the propagation of the growth front consisting of juxtaposed opposite polar Process schematic used to create periodically oriented III-nitride materials. First, a buffer layer is deposited.…”

Section: Fabrication Of Lps On Sapphire Substratementioning

confidence: 99%

“…In the past few decades, there has been intensive investigation in the area of III-nitride wide bandgap materials including InN, GaN, AlN, and their ternary, quaternary alloys [1][2][3][4]. The unique properties of adjustable direct bandgaps, high break down field, high saturation velocity, good thermal conductivity and resistance to harsh environment conditions make III-nitride materials ideal candidates for various kinds of applications, including solid-state lighting and displays [5,6], photodetectors for radar systems and medical diagnostics [7,8], power electronics used in automobiles, railway systems, and consumer electronics [9,10], and 5G communications [11].…”

Section: Introductionmentioning

confidence: 99%

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Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects

Guo

Chen

et al. 2020

J. Phys. D: Appl. Phys.

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Due to their non-centrosymmetric crystal orientation, wurtzite III-nitride crystals have two distinct orientations, i.e. III-polar and N-polar along the c-axis. Extensive effort has been devoted to polarity control and the characterization of III-nitride thin films. Both III-polar and N-polar films possess some unique features. By taking full advantage of both III and N-polar domains in a single structure, a lateral polarity structure (LPS), where III-polar and N-polar domains are grown side-by-side simultaneously on the wafer, has attracted great interest. In this review, recent progress in the design and fabrication of III-nitride LPS on various substrates is summarized. The structural, optical and electronic properties of III-nitride thin films incorporating LPS are discussed, with special attention paid to the interface between adjacent domains. Various techniques to qualitatively and quantitatively identify the polarity domains are provided, and their applications in optoelectronic and electronic devices including light-emitting-diodes, nonlinear frequency doubling waveguides, Schottky-barrier-diodes, etc, are intensively elaborated on. Finally, challenges related to the development of LPS-based devices and future perspectives are presented.

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Section: Fabrication Of Lps On Sapphire Substratementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects

Guo

Chen

et al. 2020

J. Phys. D: Appl. Phys.

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“…In 2011, Kim et al [7] manufactured S-band 69.9% PAE class-F and 69.4% PAE inverse class-F power amplifiers. We also increased the PAE of the GaN-based internally-matched power amplifier to 71% at 4 GHz [8] and 69% at 5.5 GHz. [9] At X-band applications, Resca et al [10] reported a GaN MMIC power amplifier with 38% PAE for future generation synthetic aperture radar (SAR) systems.…”

Section: Introductionmentioning

confidence: 99%

X-band inverse class-F GaN internally-matched power amplifier

Zhao

Han

et al. 2016

Chinese Phys. B

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An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor C ds , influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

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“…[1,2] Amplifiers, transmitter/receiver T/R modules and radars based on GaN devices are less complex, with output power density, gain, efficiency and reliability improved. [3][4][5][6] In recent years, many two-stage power amplifiers based on GaN HEMT have been reported. Although they have achieved splendid performances, the power added efficiency PAE is less than 50% and the associated power gain is less than 25 dB.…”

Section: Introductionmentioning

confidence: 99%

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

Zheng

et al. 2015

Chinese Phys. B

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A C-band high efficiency and high gain two-stage power amplifier based on AlGaN/GaN high electron mobility transistor (HEMT) is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency (PAE) are determined at the fundamental and 2nd harmonic frequency (f0 and 2f0). The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5.4 GHz–5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15% and an associated power gain of 28.7 dB, which is an outstanding performance.

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71% PAE C‐band GaN power amplifier using harmonic tuning technology

Cited by 5 publications

References 10 publications

Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects

Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects

X-band inverse class-F GaN internally-matched power amplifier

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT

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