71‐1: Development of Micro‐Pixellated GaN LED Array Micro‐Display System

Sun, Chengwei; Chao, Chia-Hsin; Chen, Heng‐Yin; Chiu, Yu‐Hui; Yeh, Wen-Yung; Wu, Ming-Hsien; Yen, H. H.; Liang, Chao‐Chiun

doi:10.1889/1.3620998

Cited by 17 publications

(10 citation statements)

References 3 publications

(3 reference statements)

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“…The miniaturized displays that can be accommodated to those market applications need to meet stringent technical requirements that cannot be fully satisfied by current display technologies such as LCD or OLED technologies. Inorganic compound semiconductor materials based micro-LED micro-displays are viewed as one of the most promising solutions and has gained considerable traction in recent years [1][2][3]. As a self-emissive display technology, micro-LED micro-displays are more compact in size and can provide higher contrast ratio and energy efficiency compared to LCD and LCoS technologies.…”

Section: Background and Objectivementioning

confidence: 99%

P‐125: Monochromatic Active Matrix Micro‐LED Micro‐displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

Ou¹,

Chong²,

Xu³

et al. 2018

Symp Digest of Tech Papers

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Section: Background and Objectivementioning

confidence: 99%

P‐125: Monochromatic Active Matrix Micro‐LED Micro‐displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

Ou¹,

Chong²,

Xu³

et al. 2018

Symp Digest of Tech Papers

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“…Micro-LED micro-display is typically fabricated by flip-chip bonding of micro-LED arrays on CMOS active matrix driver IC without removal of LED substrate [4][5][6][7][8][9]. For green and blue color emission, GaN-based micro-LED arrays are formed on a sapphire substrate.…”

Section: Introductionmentioning

confidence: 99%

31.3: Low Optical Crosstalk Micro‐LED Micro‐Display with Semi‐Sphere Micro‐Lens for Light Collimation

Chong¹,

Ou²,

Xu³

et al. 2018

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A 400×240 monochromic micro‐LED micro‐display based on GaN vertical‐LED structure is presented. The micro‐display has the pixel pitch of 30 μm and the size of micro‐LEDs is only 8 μm. It is realized by bonding the GaN epi with the pre‐defined anode pad array to the specific pixel driver on the IC backplane, followed by laser lift‐off and ICP etch process to form isolated micro‐LED pixel array. The electrical connection of n‐type GaN on micro‐LEDs is done by a layer of metal‐grid which serves as a common cathode. Comparing with conventional lateral micro‐LED structure, the vertical‐LED architecture used in our micro‐LED micro‐display is more advantageous of achieving higher device performance such as better current injection, higher light extraction efficiency, low light crosstalk and is more capable of producing compact micro‐LED arrays. In addition, wafer‐level processed semi‐sphere micro‐lens array is also integrated into the micro‐display with each micro‐lens coupled to a single micro‐LED pixel. The micro‐lenses can effectively collimate divergent light emitted from micro‐LEDs leading to a significant improvement of projection brightness when used in a projection light engine. The self‐emissive micro‐LED micro‐display shows its great potentials for projectors and many other applications.

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“…As micro‐LED is a current‐driving and self‐emitting device, AM scheme is more suitable to be adopted as driving circuit design of large‐scale and high‐resolution micro‐LED displays. It has many superior performances than PM such as better driving capability, individual controllability and uniformity, low power consumption and higher efficiency …”

Section: Introductionmentioning

confidence: 99%

“…It has many superior performances than PM such as better driving capability, individual controllability and uniformity, low power consumption and higher efficiency. [28][29][30] Even with AM programing scheme, the increasing number of rows and columns requires a large amount of connecting pads and brings huge difficulties for micro-LED system design and lowers power efficiency as well. As higher resolution is needed, more connection pads required for the micro-LED displays.…”

Section: Introductionmentioning

confidence: 99%

Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)

Zhang

Peng

Lau

et al. 2017

Jnl Soc Info Display

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High pixel per inch and high‐resolution micro‐LED displays are attracting more and more attentions. The increasing pixel number requires a large amount of bonding pads and brings huge difficulties to micro‐LED system design and lowers power efficiency as well. It is urgent to integrate row and column driving circuits onto the micro‐LED panel. Here, we report a fully integrated active matrix programmable micro‐LED system on panel (SoP) with ultraviolet and blue emission wavelengths. The micro‐LED SoP has a resolution of 60 × 60 and pixel pitch of 70 μm. The micro‐LED SoP was achieved by integrating micro‐LED arrays with silicon‐based p‐channel metal‐oxide semiconductor driving panel using fine‐toned flip‐chip bonding technology. With fully integrated scan and data circuits, the number of bonding pads was greatly reduced from 136 to 28, and large amount of metal interconnection lines were saved. The micro‐LED SoP panel was mounted on a periphery driving board, and representative characters were displayed successfully.

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71‐1: Development of Micro‐Pixellated GaN LED Array Micro‐Display System

Cited by 17 publications

References 3 publications

P‐125: Monochromatic Active Matrix Micro‐LED Micro‐displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

P‐125: Monochromatic Active Matrix Micro‐LED Micro‐displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

31.3: Low Optical Crosstalk Micro‐LED Micro‐Display with Semi‐Sphere Micro‐Lens for Light Collimation

Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)

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