7 terahertz broadband GaP electro-optic sensor

Wu, Qun; Zhang, Xicheng

doi:10.1063/1.118691

Cited by 320 publications

(201 citation statements)

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“…Using this assumption, we deduce an average THz power of 40 µW. To our knowledge, this value, supported by the large value of P/P probe , represents the strongest THz signal reported in the literature using a Ti:sapphire oscillator as a pump source (Cai et al 1997, Wu and Zhang 1997, McLaughlin et al 2000, Heyman et al 2001, Andrews et al 2002.…”

Section: Resultssupporting

confidence: 49%

A terahertz system using semi-large emitters: noise and performance characteristics

et al. 2002

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We have built a relatively simple, highly efficient, terahertz (THz) emission and detection system centred around a 15 fs Ti:sapphire laser. In the system, 200 mW of laser power is focused on a 120 µm diameter spot between two silverpaint electrodes on the surface of a semi-insulating GaAs crystal, kept at a temperature near 300 K, biased with a 50 kHz, ±400 V square wave. Using rapid delay scanning and lock-in detection at 50 kHz, we obtain probe laser quantum-noise limited signals using a standard electro-optic detection scheme with a 1 mm thick (110) oriented ZnTe crystal. The maximum THz-induced differential signal that we observe is P/P = 7 × 10 −3 , corresponding to a THz peak amplitude of 95 V cm −1 . The THz average power was measured to be about 40 µW, to our knowledge the highest power reported so far generated with Ti:sapphire oscillators as a pump source. The system uses off-the-shelf electronics and requires no microfabrication techniques.

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Section: Resultssupporting

confidence: 49%

A terahertz system using semi-large emitters: noise and performance characteristics

et al. 2002

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“…Part of the laser output is focused onto a ZnTe, GaP, or GaSe crystal to generate ultrashort THz pulses by difference-frequency mixing [18]. After transmission through the NT sample, the THz electric field is detected electro-optically by a sampling pulse in a ZnTe or GaP crystal [19,20]. Our spectrometer covers the frequency window from 1 to 40 THz by using various pairs of emitter and detection crystals, see Fig.…”

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confidence: 99%

Mechanism of the Far-Infrared Absorption of Carbon-Nanotube Films

et al. 2008

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The far-infrared conductivity of single-wall carbon-nanotube ensembles is dominated by a broad absorption peak around 4 THz whose origin is still debated. We observe an overall depletion of this peak when the nanotubes are excited by a short visible laser pulse. This finding excludes optical absorption due to a particle-plasmon resonance and instead shows that interband transitions in tubes with an energy gap of $10 meV dominate the far-infrared conductivity. A simple model based on an ensemble of two-level systems naturally explains the weak temperature dependence of the far-infrared conductivity by the tubeto-tube variation of the chemical potential.

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“…The THz probe pulses were coupled into an end facet of the laser, with the transmitted pulses collected from the opposite facet and detected by a 300µm thick GaP crystal using electro-optic sampling. 12 The spectral gain was determined using a transmitted reference pulse with the QCL under zero bias. Details of this technique can be found in reference 7.…”

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confidence: 99%