6MeV electron irradiation effects on electrical properties of Al/TiO2/n-Si MOS capacitors

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

“…e is the electronic charge and A is the MOS capacitor area. The "N bt " in the present case (10 13 cm À2 ) was higher than reported by Zhang et al 14 and Laha et al 31 (10 12 cm À2 ) by 2-3 orders of magnitude. However, the "change in N bt " as a function of radiation dose was much smaller than reported by same authors.…”

“…However, the "change in N bt " as a function of radiation dose was much smaller than reported by same authors. 14,31 The variation in the accumulated interface charges created by the radiations was responsible for the observed change in the flat band voltage (V FB ). The V FB was extracted from the Mott-Schottky relation using 32…”

High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures

“…Thus, much of the research work is widespread on the application of thermodynamically metastable anatase phase. The deposition of titania by vacuum based processes are extensively investigated, but requires additional attention during the process [11][12][13][14]. Alternatively, solution based process is quite attractive, as titania can be obtained with high purity and chemical homogeneity [15].…”

Total dose response of Al<inf>2</inf>O<inf>3</inf>-based MOS structure under gamma-ray irradiation

“…Many efforts have been devoted to study of the electric characterization of AhOrbased MOS devices [1]- [4], but few works were dedicated to the study of the radiation effects in these devices [5]- [8]. Choi et al [5] compared the anti-radiational performance of the 3.3nm thick nitrogen oxide film and the 5.4nm thick AIP3 films after the heavy ion irradiation, showing that with equivalent electrical thickness Alumina film has a better anti-radiational performance.…”

“…Yilmaz et al [7] observed a great sensitivity of AhOrbased devices with respect to Si02-based ones, suggesting a better trapping efficiency for A1203. P.Laha et al [8] studied the total dose effects of the structure of AI! A1203/n-Si structure MOS capacitor at the electron irradiation environment that the average energy is about 6MeV , observing that the 6 MeV electron beam caused the variations in crystallinity, defects and dangling bonds at the interface, which eventually results in the variation of electrical properties.…”