6H-silicon carbide devices and applications

Palmour, John W.; Edmond, J. A.; Kong, H.S.; Carter, C.H.

doi:10.1016/0921-4526(93)90278-e

Cited by 186 publications

(54 citation statements)

References 3 publications

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“…Silicon carbide (SiC) is a wide band gap indirect semiconductor 1 with a variety of applications such as high power electronics, spintronics 2 and quantum information processing [3][4][5][6][7] . SiC nanocrystals (NCs) are proven to be favorable biological labels due to their good biocompatibility 8,9 , hemocompatibility 10 and excellent solubility in polar solvents 11 .…”

Section: Introductionmentioning

confidence: 99%

Identification of Luminescence Centers in Molecular-Sized Silicon Carbide Nanocrystals

et al. 2015

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Understanding the fluorescence of complex systems such as small nanocrystals with various surface terminations in solution is still a scientific challenge. Here we show that the combination of advanced time-resolved spectroscopy and ab initio simulations, aided by surface engineering, is able to 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 2 identify the luminescence centers of such complex systems. Fluorescent water soluble silicon carbide (SiC) nanocrystals have been previously identified as complex molecular systems of silicon, carbon, oxygen and hydrogen held together by covalent bonds that made the identification of their luminescence centers unambiguous. The aqueous solutions of molecular-sized SiC nanocrystals are exceedingly promising candidates to realize bioinert non-perturbative fluorescent nanoparticles for in vivo bioimaging, thus the identification of their luminescent centers is of immediate interest. Here we present identification of two emission centers of this complex system: surface groups involving carbon -oxygen bonds and a defect consisting of silicon -oxygen bonds which becomes the dominant pathway for radiative decay after total reduction of the surface. The identification of these luminescent centers reconciles previous experimental results on the surface and pH dependent emission of SiC nanocrystals and helps design optimized fluorophores and nanosensors for in vivo bioimaging.

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Section: Introductionmentioning

confidence: 99%

Identification of Luminescence Centers in Molecular-Sized Silicon Carbide Nanocrystals

et al. 2015

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“…6 [7]. Operations between 300 and 650 °C using high-temperature-operation SiC transistors have been confirmed [18,19]. Further, by using 6H-SiC inversion-type n-MOS and p-MOSFETs, test fabrication of high-temperature operational ICs has been carried out.…”

Section: High-breakdown-voltage Schottky Diodesmentioning

confidence: 99%

Progress of semiconductor silicon carbide (SiC)

Matsunami

1998

Electron. Comm. Jpn. Pt. II

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“…The excellent physical and electrical properties of silicon carbide, such as wide band gap (between 2.2 and 3.3 eV), high thermal conductivity (three times larger than that of Si), high breakdown electric field, high saturated electron drift velocity and resistance to chemical attack, defines it as a promising material for high-temperature, high-power and highfrequency electronic devices (Muller et al, 1994;Brown et al, 1996), as well as for optoelectronic applications (Palmour et al, 1993;Sheng et al, 1997). In Ref.…”

Section: Temporally Shaped Vs Unshaped Ultrashort Laser Pulses Applimentioning

confidence: 99%

Effect of Pulse Laser Duration and Shape on PLD Thin Films Morphology and Structure

Ristoscu¹,

Mihăilescu²

2011

Lasers - Applications in Science and Industry

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6H-silicon carbide devices and applications

Cited by 186 publications

References 3 publications

Identification of Luminescence Centers in Molecular-Sized Silicon Carbide Nanocrystals

Identification of Luminescence Centers in Molecular-Sized Silicon Carbide Nanocrystals

Progress of semiconductor silicon carbide (SiC)

Effect of Pulse Laser Duration and Shape on PLD Thin Films Morphology and Structure

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