6G Ultra-Low Latency Communication in Future Mobile XR Applications

Bojković, Zoran; Milovanović, Dragan; Fowdur, Tulsi Pawan; Indoonundon, Madhavsingh

doi:10.1007/978-981-16-0425-6_22

Cited by 3 publications

(3 citation statements)

References 12 publications

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“…Obstacles in Mo 3 can take the basic shapes of either a rectangle or an ellipse 4 . The obstacles are defined by providing the geometric information needed to place them in the movement area, that is: 1) the coordinates of the center and the length of horizontal semi axis and vertical semi axis for an ellipse, and 2) the coordinates of the center and the length of horizontal and vertical sides for a rectangle.…”

Section: ) Obstacle Definitionmentioning

confidence: 99%

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Mo³: A Modular Mobility Model for Future Generation Mobile Wireless Networks

Nardis

Benedetto²

2022

IEEE Access

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Mobility modeling in 5G and beyond 5G must address typical features such as time-varying correlation between mobility patterns of different nodes, and their variation ranging from macro-mobility (kilometer range) to micro-mobility (sub-meter range). Current models have strong limitations in doing so: the widely used reference-based models, such as the Reference Point Group Mobility (RPGM), lack flexibility and accuracy, while the more sophisticated rule-based (i.e. behavioral) models are complex to set-up and tune. This paper introduces a new rule-based Modular Mobility Model, named Mo 3 , that provides accuracy and flexibility on par with behavioral models, while preserving the intuitiveness of the reference-based approach, and is based on five rules: 1) Individual Mobility, 2) Correlated Mobility, 3) Collision Avoidance, 4) Obstacle Avoidance and 5) Upper Bounds Enforcement. Mo 3 avoids introducing acceleration vectors to define rules, as behavioral models do, and this significantly reduces complexity. Rules are mapped one-to-one onto five modules, that can be independently enabled or replaced. Comparison of time-correlation features obtained with Mo 3 vs. reference-based models, and in particular RPGM, in pure micro-mobility and mixed macro-mobility / micro-mobility scenarios, shows that Mo 3 and RPGM generate mobility patterns with similar topological properties (intra-group and inter-group distances), but that Mo 3 preserves a spatial correlation that is lost in RPGM -at no price in terms of complexity -making it suitable for adoption in 5G and beyond 5G.

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Section: ) Obstacle Definitionmentioning

confidence: 99%

“…Most likely, TTI A preliminary and simplified version of the correlated and group mobility model presented in this paper was previously made available online, but not published elsewhere: https://arxiv.org/abs/1704.03065. will further decrease in beyond 5G, to support ultra-Reliable Low Latency Communications (uRLLC) [4].…”

Section: Introductionmentioning

confidence: 99%

Mo³: A Modular Mobility Model for Future Generation Mobile Wireless Networks

Nardis

Benedetto²

2022

IEEE Access

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“…The radio-over-fiber (RoF) network, a key technology for beyond 5G/6G systems [3][4][5], offers a potential solution to the problems caused by the tremendous increase in wireless communication users and unprecedented data traffic [6,7]. Considering the requirements of an RoF network, ultra-low latencies, large bandwidths, and high data rates [8] are essential; these can be achieved by utilizing high-performance photonic devices, particularly high-speed photodetectors (PDs). High-speed PDs possess a large photocurrent in the linear region with high output power that can meet the demands of future RoF networks using analog signals [9].…”

Section: Introductionmentioning

confidence: 99%

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Yi,

Umezawa,

Akahane

et al. 2024

IEEE Access

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We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams' thermal model. Simulations and measurements of the photocurrent in the linear region, 3-dB bandwidth and thermal analyses were conducted. We found a good agreement between the measured photocurrent and simulations. The measured linear photocurrent of PIN-PD with 50 μm substrate and 0.4 μm absorber was 28 mA at -2 V, which was related to the expected RF output power of +13 dBm at 50 GHz. In addition, thermal analyses evaluated the junction temperature corresponding to the specific measured photocurrent, as well as the 431 K for junction breakdown temperature of the fabricated PD samples. This evaluation further predicted that this type of PIN-PD would reach the thermal breakdown point when the photocurrent was 34 mA at -2 V. Furthermore, with the application of AlN flip-chip bonding, the linear and expected maximum photocurrent were improved to 30 mA and 45 mA, respectively. Finally, we predicted the PD temperature and maximum photocurrent of 55 mA using AlN instead of InP as the main substrate.INDEX TERMS breakdown prediction, high linear photocurrent, PIN-PD, thermal analyses

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