67-1: Novel LTPS Technology for Large Substrate

Abstract

We developed Partial Laser Anneal Silicon (PLAS) TFT of novel LTPS technology for large substrate, which had the mobility of 28.1 cm2/Vs in bottom gate structure. Moreover there is no limit of substrate size, such as Gen10 and more. This innovative technology can enable the conversion from an α‐Si TFT to a high mobility TFT most easily and inexpensively. Photo‐stability of PLAS will be suitable to OLED backplane, HDR TV, and outdoor IDP.

57‐3: Folded Pixel Circuit Design in Grain‐Boundary Free (100) Oriented LTPS Stripes Fabricated by Selective CW‐laser Lateral Crystallization

“…The crystallizations of the selected a-Si area including TFT active regions on a glass substrate have been proposed in order to improve crystallization throughput and to make the CW laser Lateral Crystallization (CLC) LTPS-TFTs having a large NMOS mobility of 500 cm 2 /Vs [1]. Similar methods have been developed for micro-crystalline Si TFTs having NMOS mobility of 3 cm 2 /Vs [2], and LTPS-TFTs having NMOS mobility of 28 cm 2 /Vs [3,4]. These technologies are easily scaled up for a larger mother substrate compared to the conventional excimer laser crystallization with a long line beam [5,6].…”

Bottom gate single crystal Si thin-film transistors fabricated by all sputtering processes

“…Although LTPS top-gate TFTs (TG-TFTs) have been widely applied for driving OLEDs, BG TFTs are also in high demand because of their compatibility with fabrication process of a-Si BG-TFTs. Several groups have proposed LTPS BG-TFTs in which a-Si precursor films are crystallized by either excimer laser crystallization (ELC), [6][7][8][9] or cw laser crystallization (CLC), 10,11,12) However, the uniformity of TFTs is also an important issue for high-definition displays because the variation of grain numbers in the channel region causes characteristic deviation of TFTs. Single-crystal Si (c-Si) TFTs provide the ultimate solution to this challenge.…”

P‐51: Design of Integrated Gate drivers with Low Temperature Poly‐Silicon Thin Film Transistor

“…Therefore, LTPS backplane panel can be designed higher aperture ratio, resolution and thinner boarder. However, AMOLED displays with LTPS TFTs suffer from non-uniformity due to the variation of the threshold voltage (Vth) and mobility [1,2]. Usually, a compensation pixel circuit [3][4][5] is adopted to solve the problem, which need a scan circuit to enable compensation and data writing for each row, and an emission circuit to turn OLED off during compensation period and data writing period.…”