P‐51: Design of Integrated Gate drivers with Low Temperature Poly‐Silicon Thin Film Transistor

Abstract

A couple of gate drivers are fabricated with LTPS TFTs in this paper. In order to improve the stabilization of the circuit output, the three TFTs' structure are utilized in the scan circuit and the method of inserting a TFT is adopted in the emission circuit. Moreover, high temperature operation at 85 within 240 hours and low temperature operation at -40 within 240 hours without failure show the useful stabilization of the proposed circuits. Finally, a 5.5-in. QHD OLED panel on substrate was successfully demonstrated with the gate driver circuits.

Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors

“…In previous investigations, a higher GI quality was found to effectively suppress the injection of electron. All of these methods can be considered to prevent the hump effect caused by electron trapping at edge of the active layer [5].…”

“…Recently, system on glass (SOG) technology has become highly attractive in industry. SOG technology can realize advantages such as a narrow border and higher resolution display [1][2][3][4][5]. To achieve the ideal technologies mentioned above, a thin-film transistor (TFT) needs to be operated under high voltage and high frequency.…”

P‐72: A Bidirectional Gate Driver Circuit with Scan Signal for Low‐Frame‐Rate LTPO AMOLED Displays

“…Nevertheless, a-IGZO TFTs have low carrier mobility to yield a low driving capability, and their unstable electrical characteristics after long-term operation shorten the lifetime of displays [8]. Therefore, Zhang et al proposed a low-temperature polycrystalline silicon (LTPS) gate driver circuit, comprised of ten TFTs and two capacitors [9]. The mobility of the LTPS TFT is high and enables the gate driver circuit to realize the narrow bezel with small layout sizes.…”

32.3: Integrated Gate Driver Working at Low Temperature for Vehicle Displays

“…Lin et al proposed a gate driver circuit with extended operating temperature, but too many clock signals are used, which places higher requirements on external drive ICs [5]. Besides, the increase of clock signals will also occupy additional display border.…”