Records of the IEEE International Workshop on Memory Technology, Design and Testing
DOI: 10.1109/mtdt.2000.868622
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66 MHz 2.3 M ternary dynamic content addressable memory

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Cited by 29 publications
(12 citation statements)
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“…Because of this there can be variations in the height and width of a cell and we leave these as optional parameters (the default height and width are extracted from [14]). For example, a Dynamic TCAM [16], [17] increases the effective number of bits per area because it uses only 1-transistor dynamic cell to store a bit. When our model is given the height and width of dynamic TCAM cell, we can estimate the power accurately even though the bit storage is completely different.…”
Section: Discussionmentioning
confidence: 99%
“…Because of this there can be variations in the height and width of a cell and we leave these as optional parameters (the default height and width are extracted from [14]). For example, a Dynamic TCAM [16], [17] increases the effective number of bits per area because it uses only 1-transistor dynamic cell to store a bit. When our model is given the height and width of dynamic TCAM cell, we can estimate the power accurately even though the bit storage is completely different.…”
Section: Discussionmentioning
confidence: 99%
“…Ternary CAMs are beginning to have acceptance as a viable alternatives for network processors [5,6,7]. This type of CAM is able to match in parallel stored data with incoming data, which in this case is a destination address.…”
Section: Ternary Content Addressable Memorymentioning
confidence: 99%
“…In this work, we focus on binary CAMs. Vol As a type of memory, CAM cells are manufactured using SRAM [7]- [12] or DRAM technology [13], [14]. While DRAM based CAMs provide larger capacities, SRAM based CAMs have seen higher adoption as they provide faster search speed, which is a priority for all applications using CAMs.…”
Section: Introductionmentioning
confidence: 99%