65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems

Hsu, Ruei Hung; Lin, B. N.; Wu, Wei-Yih; Xiao, H.; Jau, Jack

doi:10.1117/12.657356

Cited by 3 publications

References 6 publications

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High-throughput contact critical dimension and gray level value measurement

et al. 2006

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A high-throughput e-beam monitoring system, eProfile®, is designed to quickly measure gray level value (GLV) and critical dimension (CD) of the structures of interest on product wafers. Two wafers are used in this study, one wafer is at after etch inspection (AEI) with contact mask focus exposure matrix (FEM), and another is normal exposure contact AEI wafer. High-throughput CD measurement of AEI wafer at holes with different patterns, such as semi-dense and SRAM array were measured with results matched the FEM expectation very well. The system is also be used to measure GLV of the SEM images on contact holes of a normal production wafer to reflected the under etch (high GLV) problem in a semi-dense hole pattern.

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High-throughput contact critical dimension and gray level value measurement

et al. 2006

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Inspection of 32nm imprinted patterns with an advanced e-beam inspection system

Xiao

Wang

et al. 2009

SPIE Proceedings

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We used electron beam (e-beam) inspection (EBI) systems to inspect nano imprint lithography (NIL) resist wafers with programmed defects. EBI with 10nm pixel sizes has been demonstrated and capability of capturing program defects sized as small as 4nm has been proven. Repeating defects have been captured by the EBI in multiple die inspections to identify the possible mask defects. This study demonstrated the feasibility of EBI as the NIL defect inspection solution of 32nm and beyond.

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Optical proximity correction: A cross road of data flows

Bisschop¹

2016

Jpn. J. Appl. Phys.

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This paper reviews the various data flows that occur in the generation and verification of optical proximity correction (OPC) for an optical lithography photomask. First we review the models that are or can be used in the OPC model-calibration flow, with some emphasis on those models that are not yet standard practice. Through an efficient selection of calibration structures, the data amounts needed for model calibrations can be usually kept reasonably small. This is much less the case in the OPC verification step (computationally first and on-wafer afterwards), where data volumes can be very large. Especially the inspection of printed test wafer, where the printability of large number of structures needs to be assessed throughout the intended process window, currently presents important challenges as “hotspot” detection and printability quantification needs to be combined with a short turn-around time. We will discuss some of the approaches that are being employed to deal with these conflicting requirements.

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65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems

Cited by 3 publications

References 6 publications

High-throughput contact critical dimension and gray level value measurement

High-throughput contact critical dimension and gray level value measurement

Inspection of 32nm imprinted patterns with an advanced e-beam inspection system

Optical proximity correction: A cross road of data flows

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