65‐4: Investigation on Blue Quantum‐Dot Light‐Emitting Diode with Positive Aging Treatment

Abstract

We have demonstrated a high efficiency blue quantum‐dot light‐emitting diode (QLED) with positive aging treatment. While device was statically stored 602 hrs, the external quantum efficiency (EQE) of QLED increased from 4.8% to 7.8%, which resulted from the enhancement in electron injection at quantum dot (QD)/ electron transporting layer (ETL) interface. It was confirmed by the measurement of the depth profile of X‐ray photoelectron spectroscopy (XPS). It indicated that cathode material, aluminum (Al), diffused into ETL material, zinc oxide (ZnO), leading to aluminium zinc oxide (AZO) alloy, Al doped ZnO.

P‐88: Efficiency Improvement of Top‐Emission Green Quantum‐Dot Light‐Emitting Diode with Dielectric‐Metal‐Dielectric Cathode

“…[1,2]. Device efficiency for QLED is an important concern for real application, and thus various methods improving QLED performance had been reported, such as using electron blocking layer (EBL), stepwise hole transporting layer and positive aging for improving carrier balance in QLED [3,4,5].…”