In this work, we have demonstrated a top‐emission green quantum dot light‐emitting diode (QLED) with dielectric‐metal‐dielectric (DMD) structure as transparent cathode, which consisted of ytterbium (Yb)‐doped molybdenum oxide (MoO3)/Yb:Ag/MoO3. The DMD‐QLED exhibited a reduced operational voltage and higher efficiency by 1.43‐folds enhancement in external quantum efficiency relative to reference QLED due to the improvement of electron injection and transport as well as less exciton quenching.
In this work, green top emission quantum dot light-emitting diodes with different structure, that are normal and inverted structure, were demonstrated. The device characterization of these two device are compared. The QLED with inverted structure exhibits better device performance than normal one. Current efficiency is improved from 26.9 to 42.5 cd/A, as well as the external quantum efficiency is improved from 5.32 to 9.42 %. Operational lifetime of inverted structure is longer and more reliable than normal structure by ~10-times.
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