640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Gunapala, Sarath D.; Bandara, S. V.; Hill, Cory J.; Ting, David Z.; Liu, J. K.; Rafol, Sir B.; Blazejewski, E. R.; Mumolo, Jason M.; Keo, Sam A.; Krishna, S.; Chang, Yia‐Chung; Shott, C. A.

doi:10.1117/12.683772

Cited by 5 publications

(13 citation statements)

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“…The wavelengths of the spectral peaks (λ p ) are determined by the energy difference between quantized states in the DWELL. The hybrid quantum-dot/quantum-well, or dot-in-a-well, device offers two advantages: (1) challenges in wavelength tuning through dot-size control can be compensated in part by engineering the quantum well sizes, which can be controlled precisely; (2) quantum wells can trap electrons and aid in carrier capture by QDs, thereby facilitating ground state refilling [5]. The advantage is that it would increase the absorption quantum efficiency.…”

Section: The Dot-in-the-well Infrared Photodetectormentioning

confidence: 99%

“…The main benefit in using the QD approach stems from 3D quantum confinement, which (1) enables normal incidence absorption by modifying the optical transition selection rule, and, (2) increases the photo-excited carrier lifetime by reducing optical phonon scattering via the "phonon bottleneck" mechanism [5]. However, QDs also have some drawbacks that need to be addressed.…”

Section: Quantum Dot Infrared Photodetector (Qdip)mentioning

confidence: 99%

“…One highly successful method of achieving QDs is through self-organized growth in the Stranski-Krastanow growth mode [5]. Similar to quantum wells, these structures are fabricated by MOCVD or MBE using III-V materials (e.g., InGaAs/AlAs/GaAs/InAs).…”

Section: Quantum Dot Materials Growthmentioning

confidence: 99%

“…QDs are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QD infrared photodetectors (QDIPs) with properly engineered dots have been predicted theoretically to have significant advantages over quantum well infrared detectors (QWIPs) [5]. QDIPs are fabricated using robust wide band gap III-V materials which are well suited to the production of highly uniform LWIR arrays.…”

Section: Quantum Dot Infrared Photodetector (Qdip)mentioning

confidence: 99%

“…In a typical detector structure, QD densities are low (compared to the number of dopants in the active regions of QWIPs); so while individual QDs are efficient absorbers, typical QD densities are not high enough to achieve high quantum efficiency. Thus, while QD based infrared detectors have clearly demonstrated normal incidence absorption [5][6], and, in some instances, higher operating temperature as well [5], they are still lacking in quantum efficiency and responsivity. Fig.…”

Section: Quantum Dot Infrared Photodetector (Qdip)mentioning

confidence: 99%

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III-V infrared research at the Jet Propulsion Laboratory

et al. 2009

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Jet Propulsion Laboratory is actively developing the III-V based infrared detector and focal plane arrays (FPAs) for NASA, DoD, and commercial applications. Currently, we are working on multi-band Quantum Well Infrared Photodetectors (QWIPs), Superlattice detectors, and Quantum Dot Infrared Photodetector (QDIPs) technologies suitable for high pixel-pixel uniformity and high pixel operability large area imaging arrays. In this paper we report the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band QWIP focal plane array (FPA). In addition, we will present the latest advances in QDIPs and Superlattice infrared detectors at the Jet Propulsion Laboratory.Keywords: infrared detectors, infrared imaging, quantum well devices QUANTUM WELL INFRARED PHOTODETECTOR (QWIP)Single-band Quantum well infrared photodetectors (QWIPs) are well known for their ease of fabrication, ruggedness, pixel-to-pixel uniformity and high pixel operability [1]. QWIP is based on a resonant absorption between ground state and a quasi-continuum state. The spectral response of QWIPs are inherently narrow-band and the typical full-width at half-maximum (FWHM) is about 10% of the peak wavelength. This makes it suitable for fabrication of negligible optical cross-talk dual-band detector arrays.There are many applications that require mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) dual-band focal plane arrays (FPAs). For example, a dual-band FPA camera would provide the accurate temperature [2] of a target with unknown emissivity which is extremely important to the process of identifying objects based on their surface temperature. Dual-band infrared FPAs can also play many important roles in Earth and planetary remote sensing, astronomy, etc. Furthermore, monolithically integrated pixel co-located simultaneously readable dual-band FPAs eliminate the beam splitters, filters, moving filter wheels, and rigorous optical alignment requirements imposed on dual-band systems based on two separate single-band FPAs or a broad-band FPA system with filters. Dual-band FPAs also reduce the mass, volume, and power requirements of dual-band systems. Due to the inherent properties such as narrow-band response, wavelength tailorability, and stability (i.e., low 1/f noise) associated with GaAs based QWIPs [1], it is an appropriate detector choice for large format dual-band infrared FPAs. DUAL-BAND QWIP DEVICEAs shown in Fig. 1, our dual-band FPA is based on two different types of (i.e., MWIR and LWIR) QWIP devices separated by a 0.5 μm thick, heavily doped, n-type GaAs layer. One can stack the MWIR and LWIR multi-quantumwell (MQW) structures in different ways. The device structure shown in Fig. 1(a) is commonly used and described in reference [3]. Fig. 1 (b) -(c) are novel and these structures have two heavily doped GaAs contact layers between MWIR and LWIR MQW regions and an undoped AlGaAs layer embedded between these two GaAs contact layers.

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Section: The Dot-in-the-well Infrared Photodetectormentioning

confidence: 99%

Section: Quantum Dot Infrared Photodetector (Qdip)mentioning

confidence: 99%

Section: Quantum Dot Materials Growthmentioning

confidence: 99%

Section: Quantum Dot Infrared Photodetector (Qdip)mentioning

confidence: 99%

Section: Quantum Dot Infrared Photodetector (Qdip)mentioning

confidence: 99%

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III-V infrared research at the Jet Propulsion Laboratory

et al. 2009

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Quantum Dot Infrared Photodetectors

Razeghi¹

2009

Technology of Quantum Devices

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High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

Tsao¹,

Lim²,

Zhang³

et al. 2007

Applied Physics Letters

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This letter reports a 320×256 middle-wavelength infrared focal plane array operating at temperatures up to 200K based on an InAs quantum dot/InGaAs quantum well/InAlAs barrier detector grown on InP substrate by low pressure metal organic chemical vapor deposition. The device’s low dark current density and the persistence of the photocurrent up to room temperature enabled the high temperature imaging. The focal plane array had a peak detection wavelength of 4μm, a responsivity of 34mA∕W, a conversion efficiency of 1.1%, and a noise equivalent temperature difference of 344mK at an operating temperature of 120K.

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640x512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

Cited by 5 publications

References 0 publications

III-V infrared research at the Jet Propulsion Laboratory

III-V infrared research at the Jet Propulsion Laboratory

Quantum Dot Infrared Photodetectors

High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

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