High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

Tsao, S.; Lim, Hyun Chang; Zhang, W.; Razeghi, Manijeh

doi:10.1063/1.2740111

Cited by 74 publications

(45 citation statements)

References 10 publications

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“…Mid-IR wavelength imagery of 300K scenery based on QD arrays up to 130K are known. 3 Although this is for mid-IR rather than long-IR wavelengths, it demonstrates the potential of the QDIP technology to operate at higher operating temperatures with high quantum efficiency.…”

Section: Continued On Next Pagementioning

confidence: 99%

A large-scale quantum dot IR focal plane array

Gunapala¹

2008

SPIE Newsroom

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The artificial atomlike properties of self-assembling quantum dots enable high-operating-temperature long-wavelength IR focal plane arrays.Potential uses for light detectors operating in the 8-15µm wavelength range include ground-and space-based applications such as night vision, temperature detection, early warning systems, navigation, flight control systems, weather monitoring, as well as security and surveillance. In addition, they can be used to monitor and measure pollution, relative humidity profiles, and the distribution of different gases (such as ozone, carbon monoxide, and nitrous oxide) in the atmosphere. This is due to the fact that most of the absorption lines of gas molecules lie in this IR spectral region. The earth's atmosphere is opaque to most of the IR. Of its few transparent windows, the 8-12µm is one of the clearest. Cameras operating in this wavelength range and used in ground-based telescopes will be able to see through the earth's atmosphere, image distant stars and galaxies, and help in the search for cold objects such as planets orbiting nearby stars.Traditional quantum well IR photodetectors are made from a combination of group III and group V elements and already offer extremely high operability, mature fabrication technology, very large formats, and material production that is increasingly high volume and low cost. However, operating temperatures are moderate (40-80K), and efficiency is limited. Past attempts at solving these issues focused on improving materials quality and designing new devices. In this work we exploited the artificial atomlike properties of self-assembling quantum dots (QDs) to develop more efficient large-scale (640×512 pixel) highoperating-temperature long-wavelength infrared (LWIR) focal plane arrays (FPAs) without sacrificing the economic advantages of the mature III-V IR imaging system pipeline.QDs are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDs can confine the carriers (i.e., electrons or holes) in 3D, modifying the optical transition selection rule that forbids a quantum well from absorbing normal incident radiation and enhancing quantum efficiency. The 3D confinement of the photoexcited carrier by a quantum dot IR photodetector (QDIP) also increases its lifetime via the 'phonon bottleneck' mechanism. 1 In a traditional quantum well IR photodetector, carriers can relax by emitting (or be excited by absorbing) phonons (i.e., lattice vibrations). But confinement of the carriers in a QD results in discrete (quantized) energy levels that prevent relaxation and permit a higher operating temperature. While individual QDs are good absorbers, typical QD densities are too low to achieve high quantum efficiency. Improving it is key to achieving a competitive QD-based FPA technology. This can be accomplished by increasing the QD density or by enhancing the IR absorption in the QD-containing material.Our specific implementation used indium arsenide (InAs) and indium gallium arsenide (InGaAs) QDs embedded in ...

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Section: Continued On Next Pagementioning

confidence: 99%

A large-scale quantum dot IR focal plane array

Gunapala¹

2008

SPIE Newsroom

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“…Compared with other IR detectors, quantum well infrared photodetectors (QWIPs) have advantages including wafer-scale uniformity and high-speed operations. High performance focal plane arrays made of QWIPs have been demonstrated by several groups [1][2][3]. Another advantage of QWIPs is the ability to grow two-color or multicolor structures on the same substrate.…”

Section: Introductionmentioning

confidence: 98%

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

Chen

Kaya

Ravikumar

et al. 2016

Phys. Status Solidi C

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The authors report, for the first time, the new two‐color quantum well infrared photodetectors (QWIPs) from a non‐III‐V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X‐ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two‐color photodetectors can be turned on separately or simultaneously in the two spectral regions. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The most popular methods include the atomistic pseudopotential approach [62], eight-band k.p analysis [21,59,60,63] based on the valance force field method and numerical simulations based on finite volume methods [64,65]. Various groups around the world have successfully demonstrated good-quality infrared imaging [66][67][68][69][70] with QDIP-based FPAs. There are excellent articles covering the physics of QDIPs [61,71,72] and also that discuss the fundamental advantages and device characteristics as well as the stateof-the-art reviews [29,45,69,73,74].…”

Section: Introductionmentioning

confidence: 99%

Review of current progress in quantum dot infrared photodetectors

Barve

Lee

Noh

et al. 2009

Laser & Photonics Reviews

121

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Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. The progress made by QDIP technology over the last few years is reviewed and compared with quantum well infrared photodetectors (QWIPs). It is shown that the performance of QDIPs has significantly improved using novel architectures such as dots-in-a-well designs, and large-format (1 K 1 K) focal plane arrays have been realized. However, even though there are significant reports of performance parameters better than QWIPs from single-pixel devices, QDIP-based focal plane arrays are still a factor of 3-5 worse in terms of noise equivalent temperature difference. The reasons for the performance gap and the key scientific and technological challenges that need to be addressed to achieve the full potential of QD-based technology are discussed.Three-dimensional rendition of quantum dots in a well structure.

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High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector

Cited by 74 publications

References 10 publications

A large-scale quantum dot IR focal plane array

A large-scale quantum dot IR focal plane array

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

Review of current progress in quantum dot infrared photodetectors

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