640$\,\times\,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

Gunapala, Sarath D.; Bandara, S. V.; Hill, Cory J.; Ting, David Z.; Liu, J.K.; Rafol, B.; Blazejewski, E. R.; Mumolo, Jason M.; Keo, Sam A.; Krishna, S.; Chang, Yia‐Chung; Shott, C. A.

doi:10.1109/jqe.2006.889645

Cited by 92 publications

(68 citation statements)

References 19 publications

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“…A total of five different images were captured and displayed for cases of no filter and four different filters to visually inspect the effect of SP-FPA as compared with FPA. For a radiometric characterization of SP-FPA, the device sensitivity [31][32][33] was considered and obtained by taking the ratio of the signal voltage (V s ) to the noise voltage (V n ). The V s was measured by the FPA camera system seen the calibrated blackbody source through the narrowband filter with ∆λ~140 nm as shown in Supplementary Figure S7.…”

Section: Methodsmentioning

confidence: 99%

A monolithically integrated plasmonic infrared quantum dot camera

et al. 2011

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In the past few years, there has been increasing interest in surface plasmon-polaritons, as a result of the strong near-field enhancement of the electric fields at a metal-dielectric interface. Here we show the first demonstration of a monolithically integrated plasmonic focal plane array (FPA) in the mid-infrared region, using a metal with a two-dimensional hole array on top of an intersubband quantum-dots-in-a-well (DWELL) heterostructure FPA coupled to a read-out integrated circuit. Excellent infrared imagery was obtained with over a 160% increase in the ratio of the signal voltage (V s ) to the noise voltage (V n ) of the DWELL camera at the resonant wavelength of λ = 6.1 µm. This demonstration paves the way for the development of a new generation of pixel-level spectropolarimetric imagers, which will enable bio-inspired (for example, colour vision) infrared sensors with enhanced detectivity (D*) or higher operating temperatures.

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Section: Methodsmentioning

confidence: 99%

A monolithically integrated plasmonic infrared quantum dot camera

et al. 2011

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“…Until today much research effort has been spent on QDIPs in order to achieve a device performance similar to QWIPs but at significantly higher temperatures. Notable success has been achieved in the meantime by several groups [5][6][7][8][9][10][11]28]. The most important approach to increase the detectivity, is the introduction of barriers in order to decrease the darkcurrent and/or to place the quantum dots (QDs) inside a quantum well (QW), these are the so called dot in a well (DWELL) structures [14].…”

Section: Introductionmentioning

confidence: 99%

“…The most important approach to increase the detectivity, is the introduction of barriers in order to decrease the darkcurrent and/or to place the quantum dots (QDs) inside a quantum well (QW), these are the so called dot in a well (DWELL) structures [14]. The improvement of the detector performance in the case of the DWELL structure can be by part explained by an improvement of the refill mechanism of QDs with electrons, but also by an enhanced extraction efficiency of the photoexcited electrons within bound to bound transitions [9]. Bound to bound transitions are inherently more sensitive to normal incidence light compared to bound continuum transitions, so that the improvement of the photoexcited carrier extraction increases the quantum efficiency [15].…”

Section: Introductionmentioning

confidence: 99%

“…The result is that the responsivity decreases with increasing temperature, so that the detectivity is not only declining due to an increasing darkcurrent. Large values for the responsivity are also demanded in order to increase the frame rates in FPAs, so that a strategy must be found in order to preserve a large responsivity also for high operation temperatures [9]. In the following first part of the paper a QDIP-structure will be proposed where a quantum dot molecule (QDM) is used to optimize the electron capture and the spectral response separately.…”

Section: Introductionmentioning

confidence: 99%

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Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors can be separated into two parts: an injection part and a detection part, so that each part can be separately optimized. In order to integrate such functionality into a device, a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced. In addition to a general discussion simulation results suggest a possibility to realize such a device.

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“…The optoelectronic properties of QDs change as a function of both size and shape. The three-dimensional carrier confinement, sensitivity to normal-incidence radiation, and phonon bottleneck in QDs have spurred research interest in QD-based IR detectors 1,2 . In addition, QD-based detectors offer a tunable detection window (mid to long wavelength), which has numerous applications in such fields as defence, meteorology (e.g.…”

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confidence: 99%

Indigenous Development of 320 x 256 Focal-Plane Array Using InAs/InGaAs/GaAs Quantum Dots-In-A-Well Infrared Detectors for Thermal Imaging

Kumari¹,

Ghadi²,

Samudraiah³

et al. 2017

Current Science

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We report here the indigenous development of a 320  256 infrared focal-plane imager fabricated using an InAs quantum dots-in-a-well heterostructure, whose photoluminescence peak is at 1162 nm and activation energy is 187 meV. We discuss the fabrication and characterization of single-pixel detectors that can measure intersubband spectral responses with peak intensity at 9.3 m. Using the fabricated device, infrared images were captured at 50-90 K. Device optimization led to approximately 95% of the pixels in the imaging array being operational and a reasonably low noise equivalent temperature of approximately 100 mK at 50-60 K.Keywords: Focal-plane arrays, infrared detectors, photoluminescence peak, quantum dots, thermal imaging.NANOTECHNOLOGY -which deals with the growth and manipulation of materials at the atomic and molecular levels and facilitates the development of materials with specifically designed performance characteristics -is a key state-of-the-art technology being researched and developed worldwide. The Government of India aims to be technologically self-sufficient by developing advanced technologies indigenously. To this end, the Government has established silicon nanotechnology laboratories at prominent academic institutes such as the Indian Institutes of Technology (IITs) and the Indian Institute of Science, Bengaluru. Nanotechnological advances pertaining to III-V compounds facilitate the development of advanced high-performance devices such as infrared focal-plane arrays (IR FPAs), solar cells, lasers and highspeed devices. Quantum dot (QD) or dot-in-a-well (DWELL) IR FPAs are state-of-the-art devices that may help realize miniature sensor systems. III-V compounds have advantages such as high operating temperatures and low dark currents, resulting in their high performance and applicability. Therefore, the Indian Institute of Technology Bombay (IITB), in collaboration with the Indian Space Research Organisation (ISRO), is researching the design and development of III-V compound QD infrared photodetector/DWELL structure-based detectors, with a focus on GaAs-based QD/DWELL IR FPAs. In this communication, we discuss DWELL heterostructures and the development of a 320  256 FPA IR imager that has reasonably low noise equivalent differential temperature (NEDT).The electron-hole pairs or excitons are squeezed in a semiconductor crystallite whose radius is smaller than two times its exciton Bohr radius which is of the order of a few nanometres, leading to quantum confinement. QDs have confinement in all three directions whereas quantum wells and quantum wires have confinement in one and two directions respectively. The quantum energy levels can be predicted using the particle-in-a-box model in which the energies of states depend on the length of the box. The characteristics and properties of such materials differ from those of bulk materials. For example, the desired quantum levels of materials can be engineered and realized through appropriate material selection, growth and geometric arrangement. QD ...

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640$\,\times\,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

Cited by 92 publications

References 19 publications

A monolithically integrated plasmonic infrared quantum dot camera

A monolithically integrated plasmonic infrared quantum dot camera

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Indigenous Development of 320 x 256 Focal-Plane Array Using InAs/InGaAs/GaAs Quantum Dots-In-A-Well Infrared Detectors for Thermal Imaging

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