2009
DOI: 10.1117/12.808710
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640-nm laser diode for small laser display

Abstract: Short wavelength and highly efficient AlGaInP quantum-well laser diode is promising as a red light source for small laser display application. Two kinds of the laser diodes are presented in this paper. A narrow ridge laser diode was designed for single lateral mode. In addition, a broad area laser diode was optimized for the higher power operation. To suppress a carrier leakage from an active layer, AlInP cladding layers were adopted to both of the lasers. Evaluation tests of the fabricated lasers were perform… Show more

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Cited by 22 publications
(12 citation statements)
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“…Even when the operation takes place at room temperature, an increase in the T c by 10 C causes the light output to drop by about 20% at 0.4 A. Sufficient light output does not result with the T c exceeding 70 C. Figure 2 shows the results of measuring the wavelength for each T c .…”
Section: Temperature Characteristics Of Red Ld and Cyan Ledmentioning
confidence: 95%
See 1 more Smart Citation
“…Even when the operation takes place at room temperature, an increase in the T c by 10 C causes the light output to drop by about 20% at 0.4 A. Sufficient light output does not result with the T c exceeding 70 C. Figure 2 shows the results of measuring the wavelength for each T c .…”
Section: Temperature Characteristics Of Red Ld and Cyan Ledmentioning
confidence: 95%
“…The WPE of the red LD is about 30% when the T c is 25 C and the light output is 0.2 W [10]. Since the WPE lowers as the element temperature rises, the authors consider that the average WPE is 25% over the range of operating temperatures, for example.…”
Section: Estimation Of a Heat Value Of The Light Sourcesmentioning
confidence: 98%
“…After the epitaxial growth, a GaAs contact layer is etched off and a SiN insulator is deposited at outside of the broad stripe active area for selective current injection. The stripe width is 40 μm, the same as our 638 nm LD described in references 4,9,12,13 . After forming p-side and n-side electrodes, the wafer is cleaved for cavity length of 1500 μm.…”
Section: Laser Diode Chip Designmentioning
confidence: 99%
“…The limitation for RW lasers is the catastrophically optical mirror damage (COMD) [11], where the facet of the laser melts due to the high optical power density. While significant progress has been made to increase the COMD threshold, current state-of-the-art red-emitting RW diode lasers do not exceed 200 mW in optical output power [12,13].…”
Section: Introductionmentioning
confidence: 99%