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Krustok, J.; Mädasson, J.; Hjelt, K.; Collan, H.

doi:10.1023/a:1018526622440

Cited by 37 publications

(41 citation statements)

References 23 publications

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“…There has been some discussion about the validity of such a model to correctly interpret some observed PL emission over a wide temperature range where changes in the capture cross section of one of the levels can provide an alternative explanation. 47 In the case of fluctuating potentials where the thermal excitation of the electron or hole out of the local fluctuating TABLE II. k coefficients obtained from the slope of the ln-ln laser powerluminescence intensity plots (column 2) (uncertainty in k 6 0.05); fits to Eq.…”

Section: Resultsmentioning

confidence: 99%

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Halliday

Claridge

Goodman

et al. 2013

Journal of Applied Physics

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The growth of Cu2ZnSnS4 (CZTS) polycrystals from solid state reaction over a range of compositions, including the regions which produce the highest efficiency photovoltaic devices, is reported. X-ray measurements confirm the growth of crystalline CZTS. Temperature and intensity dependent photoluminescence (PL) measurements show an increase in the energy of the main CZTS luminescence peak with both increasing laser power and increasing temperature. Analysis of the PL peak positions and intensity behavior demonstrates that the results are consistent with the model of fluctuating potentials. This confirms that the polycrystals are heavily doped with the presence of a large concentration of intrinsic defects. The behavior of the main luminescence feature is shown to be qualitatively similar over a broad range of compositions although the nature and amount of secondary phases vary significantly. The implications for thin-film photovoltaic devices are discussed.

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Section: Resultsmentioning

confidence: 99%

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Halliday

Claridge

Goodman

et al. 2013

Journal of Applied Physics

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“…It is well known that the donor-acceptor pair transition energy decreases along with the band gap energy when the temperature is increased [12]. The experimental data for the temperature dependence of PL band intensity can be fitted by the following expression [13] …”

Section: Resultsmentioning

confidence: 99%

“…A careful inspection of the data shows that the emission band maximum slightly shifts towards higher energies (∆E p = 36 meV) with increasing excitation laser intensities from 0. 13 At low excitation laser intensities only a small fraction of the donor and acceptor levels trap carriers. This leads to recombination from distant pairs only.…”

Section: Resultsmentioning

confidence: 99%

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals

Goksen¹,

Gasanly²,

Turan³

2006

Cryst. Res. Technol.

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Photoluminescence (PL) spectra of Tl 4 Ga 3 InSe 8 layered crystals grown by Bridgman method have been studied in the wavelength region of 600-750 nm and in the temperature range of 17-68 K. A broad PL band centered at 652 nm (1.90 eV) was observed at T = 17 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.13 to 55.73 mW cm -2 range. Radiative transitions from donor level located at 0.19 eV below the bottom of conduction band to shallow acceptor level located at 0.03 eV above the top of the valence band were suggested to be responsible for the observed PL band. From X-ray powder diffraction and optical absorption study, the parameters of monoclinic unit cell and the energy of indirect band gap were determined, respectively.

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“…Indeed this is typical for a polycrystalline semiconductor film [20][21][22] in which it is generally supposed that the fields associated with grain boundaries and dangling bonds or impurity states cause the loss of fine structure and the quenching of excitonic emission. On the contrary, for the case of the isolated NWs, the spectra contain both near-edge peaks (~1.55 -1.6 eV) and donor-acceptor-pair (DAP) peaks (~1.35 -1.5 eV) that show fine structure.…”

Section: Photoluminescence From Cdte Control Films and Nanowire Arraymentioning

confidence: 99%

Microstructure and point defects in CdTe nanowires for photovoltaic applications

Williams¹,

Halliday²,

Mendis³

et al. 2013

Nanotechnology

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Publisher's copyright statement:This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/24/13/135703Additional information: Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-pro t purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. AbstractDefects in Au-catalysed CdTe nanowires VLS-grown on polycrystalline underlayers have been critically evaluated. Their low-temperature photoluminescence spectra were dominated by excitonic emission with rarely observed above-gap emission also being recorded. While acceptor bound exciton lines due to monovalent metallic impurities (Ag, Cu or Na) were seen, only deeper, donor acceptor pair emission could be attributed to the Au contamination that is expected from the catalyst. Annealing under nitrogen acted to enhance the single crystal-like PL emission, whilst oxidising and reducing anneals of the type that are used in solar cell device processing caused it to degrade. The incidence of stacking faults, polytypes and twins was related only to the growth axes of the wires (<111> 50%, <112> 30% and <110> 20%), and was not influenced by annealing. The potential electrical activity of the point and extended defects, and the suitability of these nanowire materials (including processing steps) for solar cell applications, is discussed. Overall they have quality that is superior to that of thin polycrystalline films, although questions remain about recombination due to Au.

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Cited by 37 publications

References 23 publications

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals

Microstructure and point defects in CdTe nanowires for photovoltaic applications

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Untitled

Cited by 37 publications

References 23 publications

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Luminescence of Cu2ZnSnS4 polycrystals described by the fluctuating potential model

Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl4Ga3InSe8 layered crystals

Microstructure and point defects in CdTe nanowires for photovoltaic applications

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Excitation intensity and temperature‐dependent photoluminescence and optical absorption in Tl₄Ga₃InSe₈ layered crystals