60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology

Kurita, Naoyuki; Kondoh, Hiroshi

doi:10.1109/rfic.2009.5135485

Cited by 36 publications

(19 citation statements)

References 7 publications

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“…하지만 화합물 반도체는 집적도가 낮고 가격이 비싼 단점을 가지고 있다. 최근 들어 CMOS 공정 기술이 발달 함에 따라 채널 길이가 축소되고, 낮은 가격과 높은 집적 도의 장점을 이유로 차세대 이동통신 기술인 5G와 이후 의 통신 표준에 적합한 mm-wave 대역에서도 CMOS 공정 을 이용한 전력증폭기에 대한 연구가 활발히 진행되고 있다 [1]～ [6] . [7], [8] .…”

Section: ⅰ 서 론unclassified

Design of Two-Stage Fully-Integrated CMOS Power Amplifier for V-Band Applications

Kim¹,

Cho²,

Oh³

et al. 2016

The Journal of Korean Institute of Electromagnetic Engineering

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본 논문에서는 TSMC 65 nm CMOS 공정를 이용하여 V-대역 이단 전력증폭기를 설계 및 제작하였다. 수동소자를 사용 한 간단한 구조의 정합회로를 구성하였고, 입력과 출력 정합회로를 모두 집적하였다. Pre-distortion 기법을 통해 전력 이 득을 보상해 줌으로써 전력증폭기의 선형성을 향상시켰다. 제작된 전력증폭기는 58.8 GHz의 동작 주파수와 1 V의 동작 전압에서 10.4 dB의 전력 이득, 9.7 dBm의 출력 전력 및 20.8 %의 효율 특성을 나타내었다. AbstractThis paper presents a V-band two-stage power amplifier integrated circuit using TSMC 65 nm CMOS process. The simple input, output, and inter-stage matching networks based on passive components are integrated. By compensating for power gain characteristics using a pre-distortion technique, the linearity of the power amplifier was improved. The implemented two-stage power amplifier showed a power gain of 10.4 dB, a saturated output power of 9.7 dBm, and an efficiency of 20.8 % with a supply voltage of 1 V at the frequency band of 58.8 GHz.Key

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Section: ⅰ 서 론unclassified

Design of Two-Stage Fully-Integrated CMOS Power Amplifier for V-Band Applications

Kim¹,

Cho²,

Oh³

et al. 2016

The Journal of Korean Institute of Electromagnetic Engineering

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“…In these two decades, the published works about MMW PAs are mainly about enhancement of output power and gain with power combining, reduction of passive components and neutralization of the parasitic capacitances with inductive components like transmission line, and the improvement of efficiency by linearization techniques [63][64][65][66][67][68][69][70][71][72].…”

Section: Power Amplifier (Pa)mentioning

confidence: 99%

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

et al. 2014

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Abstract:In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported. The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their functions in a MMW system. Finally, there is a conclusion and description of the future trend of the development of the MMW ICs.

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“…In [19], the 7-GHz unlicensed band in IEEE Standard 802.15.3c was fully covered by a three-stage PA through systematically shifting the peaking frequency of each of the matching networks. However, the large bandwidth is obtained by sacrificing gain.…”

Section: B Effects Of Tunability On the Bandwidth Gain And Paementioning

confidence: 99%

A 60-GHz 1-V Supply Band-Tunable Power Amplifier in 65-nm CMOS

Guo

Brinkhoff

et al. 2011

IEEE Trans. Circuits Syst. II

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This brief presents the design of a band-tunable 60-GHz CMOS power amplifier using 65-nm standard CMOS technology. To achieve high gain and PAE over the whole 7-GHz frequency band, this amplifier utilizes a differential bandswitching circuit to tune the center frequency to the channel in use, whereas high-Q transformer matching and deep-neutralized differential pairs are employed to achieve high gain and PAE in a narrow bandwidth. The amplifier achieves saturated output power of 12.3 dBm and peak PAE of 20.4% with a 1-V supply and a 63-mA current. The peak gain is 17.1 dB at 59 GHz and 16.2 dB at 53.5 GHz for the two different frequency bands, respectively.Index Terms-Band tunable, millimeter-wave integrated circuits, neutralization, power amplifier (PA).

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60GHz and 80GHz wide band power amplifier MMICs in 90nm CMOS technology

Cited by 36 publications

References 7 publications

Design of Two-Stage Fully-Integrated CMOS Power Amplifier for V-Band Applications

Design of Two-Stage Fully-Integrated CMOS Power Amplifier for V-Band Applications

Advances in Silicon Based Millimeter-Wave Monolithic Integrated Circuits

A 60-GHz 1-V Supply Band-Tunable Power Amplifier in 65-nm CMOS

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