5MeV Si Ion Modification on Thermoelectric SiO2/SiO2+Cu Multilayer Films

Abstract

We prepared samples by electron beam physical vapor deposition EB-PVD followed by ion bombardment. The samples were than characterized by photoluminescence (PL), x-ray photoelectron spectroscopy (XPS). PL was used to characterize the available energy states. XPS was used to determine the binding energies. The ML's are comprised of 100 alternating layers of SiO 2 /SiO 2 +Cu.

Characterization of gold nanodots arrangements in SiO2/SiO2+Au nanostructured metamaterials

“…Reed first coined the term QD to describe semiconductors whose electronic characteristics are closely related to the size and shape of the individual crystal. The energy of the ion traveling through the layers can be tailored to maximize the electronic stopping power within the layer while minimizing the nuclear stopping power (9). In this study, we have prepared 100 alternating multilayers of SiO 2 /SiO 2 + Au thin films.…”