56.1: Development of IGZO‐TFT and Creation of New Devices Using IGZO‐TFT

Kataoka, Yuki; Imai, H.; Nakata, Yukinobu; Daitoh, Tohru; Kimura, Takuya Matsuo Naofumi; Nakano, Taketoshi; Mizuno, Yukio; Oketani, Taimi; Takahashi, Masahiro; Tsubuku, Masashi; Miyake, Hideaki; Hirakata, Tetsuji Ishitani Yoshiharu; Koyama, Jun; Yamazaki, Shunpei; Koezuka, Junichi; Okazaki, Kenichi

doi:10.1002/j.2168-0159.2013.tb06329.x

Cited by 67 publications

(43 citation statements)

References 3 publications

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“…12,13 In particular, field effect transistors (FETs) based on CAAC-indium gallium zinc oxide (IGZO) and nc-IGZO have high reliability and have been mass-produced as active matrix displays. 6 It is well known that IGZO has the following features: (1) transparency because of their wide band-gap, 14 (2) relatively high mobility of $10 cm 2 /Vs compared with a-Si, and (3) extremely low leakage current. 15 Using these properties, OSs have been expected to be applied to many applications, such as nonvolatile memories and normally-off computers.…”

Section: Introductionmentioning

confidence: 99%

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

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To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (V O ), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of V O sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of V O and H in crystalline InGaO 3 (ZnO) m (m ¼ 1). The results indicate that when H is trapped in V O , a stable complex is created that serves as a shallow-level donor. V C 2014 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Origin of major donor states in In–Ga–Zn oxide

Nakashima

Oota

Ishihara

et al. 2014

Journal of Applied Physics

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“…(i) The off-state current (I off ) is large, which lowers the potential applied to the liquid crystal and thus lowers the screen brightness and, as a result, low frequency driving cannot be performed in still image display [1,2]. In this paper, low frequency driving in still image display is called idling stop (IDS) driving.…”

Section: Introductionmentioning

confidence: 99%

P‐135: Reflective LCD without Flicker for Reduced Eye Strain

Fukai

Niikura

Kobayashi

et al. 2014

Symp Digest of Tech Papers

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“…For IDS driving and luminance change suppression, not only an improvement in an LC material but also thin‐film transistor performance that drives LC is important. For example, a conventional LCD formed with low‐temperature polysilicon (LTPS) has a large off‐state current ( I off ) and thus cannot perform IDS driving for still‐image displays . In contrast, an LCD formed with c ‐axis‐aligned crystal indium–gallium zinc oxide (CAAC‐IGZO), which is one of the oxide semiconductors, can perform IDS driving for still‐image displays because of its small I off .…”

Section: Introductionmentioning

confidence: 99%

New approach to developing LC materials for IDS driving on reflective displays

Niikura

Kubota

Hatsumi

et al. 2016

Jnl Soc Info Display

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As usage time for portable electronic terminals increases, associated problems regarding such extended use (e.g., battery holding times and eyestrain) are highlighted. Within the domain of power saving, we previously developed an idling stop (IDS) driving that avoids unnecessary refresh. Moreover, for reducing eyestrain to the highest extent possible, we calculated a luminance change in IDS driving that is not perceived as flickering by humans, via the use of a temporal modulation transfer function. According to the results of such calculations, a liquid crystal mixture that suppresses luminance changes perceived by humans was hence constructed. With the combined use of the liquid crystal mixture and a c‐axis‐aligned crystal oxide semiconductor with low off‐state leakage current, a display could be developed wherein leakage current in IDS driving could be significantly reduced, along with enjoyed benefits of prolonged refresh intervals and power savings. The subject display is very eye‐friendly, with less flickering than comparable technologies.

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56.1: Development of IGZO‐TFT and Creation of New Devices Using IGZO‐TFT

Cited by 67 publications

References 3 publications

Origin of major donor states in In–Ga–Zn oxide

Origin of major donor states in In–Ga–Zn oxide

P‐135: Reflective LCD without Flicker for Reduced Eye Strain

New approach to developing LC materials for IDS driving on reflective displays

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