510–515 nm InGaN-Based Green Laser Diodes on<i>c</i>-Plane GaN Substrate

Mutoh, T.; Masui, Shingo; Okada, Takeshi; Yanamoto, Tomoya; Kozaki, Tokuya; Nagahama, Shin–ichi; Mukai, Takashi

doi:10.1143/apex.2.062201

Cited by 265 publications

(157 citation statements)

References 8 publications

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“…Nevertheless, during the last few years the concentration of crystal defects was successfully reduced by improved bulk production processes [8 -10]. This improvement was mostly driven by optimization of optoelectronic applications [11,12] and by pushing GaN-based lasers toward the green spectral range [13][14][15][16][17]. Coherently, it enabled the first successful surface analysis experiments based on cleavage as surface preparation process [18 -26].…”

Section: Review@rrlmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Review@rrlmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

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“…Wurtzite InGaN quantum wells (QWs) are a very important gain medium for fabricating optoelectronic devices, such as near ultraviolet, blue, and green light emitting diodes (LEDs) and laser diodes (LDs) [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. The growth of InGaN QWs along the [0001] direction leads to a QW system with a very strong quantum confined Stark effect due to the large internal electric fields which result from discontinuities in spontaneous and piezoelectric polarization at QW heterointerfaces [15,16].…”

Section: Introductionmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

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It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

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“…Recently J. J. Grandusky et al have demonstrated mid-UV LED fabricated from pseudomorphic layers on the bulk AlN substrates (Grandusky et al, 2010). High-quality green (Miyoshi et al, 2009) and violet and near-UV (Perlin et al, 2005) laser diodes have been fabricated on the bulk GaN substrates, in the latter case substrate were grown by the HNPSG. Studies of high-electron mobility transistors (HEMTs) with the ALGaN channel 7 grown on different substrates also demonstrate the superiority of the single crystal AlN substrates (Hu et al, 2003), in particularity, the use of AlN substrates improved the crystalline quality of the AlGaN layer and lowered the sheet resistance of the 2-dimensional electron gas (Hashimoto et al, 2010).…”

Section: Epitaxial Layers and Devices On Single-crystal Native Iii-nimentioning

confidence: 99%