500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

Lanni, Luigia; Malm, B. Gunnar; Östling, Mikael; Zetterling, Carl-Mikael

doi:10.1109/led.2013.2272649

Cited by 85 publications

(73 citation statements)

References 12 publications

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“…For both gates the delay-power consumption product monotonically increases in the range 27 -600 °C: from 90 to 150 nJ and from 100 to 220 nJ for v1 and v2, respectively. Such values are similar to those reported in [3] for the same technology. The lower propagation delay and higher power consumption of v1 can be related to the lower resistance values selected for some of the resistors.…”

Section: Resultssupporting

confidence: 90%

“…In the range 27 -600 °C the transistor current gain shows a non-monotonous behavior with a minimum around 400 °C ( fig. 3), similarly to what has been previously reported for this technology [3] and predicted by simulation [7]. In the same temperature range the collector resistance, following the variations of the collector layer sheet resistance, exhibits a minimum at ~200 °C similarly to [3].…”

Section: Resultssupporting

confidence: 86%

“…4 (c) and (f). As already reported in [3] for v1 the logic threshold and both OR and NOR output voltage levels move towards positive voltages when the temperature rises, resulting in stable NMs about 1 V from 27 up to 600 °C (see Fig. 4 (c)).…”

Section: Resultssupporting

confidence: 78%

“…5 (c)). The temperature dependence of both propagation delay and total current consumption is mainly determined by changes in bias currents throughout the circuits [3], which tracking the temperature variations of resistor resistance depend on changes in the collector layer sheet resistance. An unexpected increase in total current consumption occurred at 600 °C, likely due to degradation of the metallization system and/or n-type ohmic contact.…”

Section: Resultsmentioning

confidence: 99%

“…The gate design reported in [3], referred to as v1 in the following, was modified in order to enlarge the gate noise margins (NMs) from about 1 to 1.5 V leading to a similar design, referred to as v2. The two designs, whose schematic diagram is shown in Fig 1 (a), consist of 10 BJTs and 11 integrated resistors and differ only in the resistance value of some resistors.…”

Section: Design and Fabricationmentioning

confidence: 99%

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ECL-Based SiC Logic Circuits for Extreme Temperatures

Lanni

Malm

Östling

et al. 2015

MSF

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Abstract. Integrated digital circuits, fabricated in a bipolar SiC technology, have been successfully tested up to 600 °C. Operated with -15 V supply voltage from 27 up to 600 °C OR-NOR gates exhibit stable noise margins of about 1 or 1.5 V depending on the gate design, and increasing delaypower consumption product in the range 100 -200 nJ. In the same temperature range an oscillation frequency of about 1 MHz is also reported for an 11-stage ring oscillator.

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Section: Resultssupporting

confidence: 90%

Section: Resultssupporting

confidence: 86%

Section: Resultssupporting

confidence: 78%

Section: Resultsmentioning

confidence: 99%

Section: Design and Fabricationmentioning

confidence: 99%

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ECL-Based SiC Logic Circuits for Extreme Temperatures

Lanni

Malm

Östling

et al. 2015

MSF

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Advances in Si and SiC Materials for High‐Performance Supercapacitors toward Integrated Energy Storage Systems

Nguyen

Aberoumand

Dao

2021

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recently attracted considerable research attention thanks to its low mass density (2.33 g cm −3 ), nontoxicity, and biocompatibility. [6,7] Besides, the intrinsic semiconductor and tunable on-chip characteristics enable Si to be a central platform of several applications, including optoelectronics, [8,9] microelectronics, [10] smart sensors, [11,12] solar cells, [13][14][15] and drug-delivery systems. [16] From an energy perspective, seamless integration of energy storage systems onto these Si-based functional devices is highly desirable toward portable and wearable applications, or when the power supply is intermittent. Therefore, significant research has focused on Sibased energy storage, including Si-based batteries (mainly Li-ion batteries) and Sibased supercapacitors.In Li-ion batteries, Si has been intensively studied as a promising anode candidate due to the low working potential of 0.4 V (vs Li + /Li) and high theoretical capacity (3579 mAh g −1 ), compared to the conventional graphite anode. [17] However, as an alloy-type material, Si anode notoriously suffers from huge volume expansion/shrinkage during lithiation/delithiation (over 300%), leading to severe delamination and pulverization of electrodes, together with unstable and nonuniform solid electrolyte interphase layers. [18] These characteristics considerably affect the cyclic stability of Si-anode Li-ion batteries. Several strategies have been implemented to address the aforementioned challenges, including composite and coating materials design, [19][20][21][22][23][24] binder design, [25][26][27][28] and electrolyte modification. [29][30][31][32] These approaches nevertheless are mainly based on wet-chemistry methods with complicated synthesis techniques, which are not suitable for an integrated system. A very thin layer of Si has been proven to accommodate the mechanical stress during alloying/ dealloying. [33][34][35] Inspired by this concept, several studies have focused on thin film Si-anode batteries based on integrated circuit (IC)-compatible routes, and their potentials to be integrated with other functional Si-based devices. [36][37][38][39] However, the intricate charge storage mechanism of Si-based batteries inevitably limits their applications. In particular, batteries suffer from low power performance. Although parallel and/or series connections of batteries can guarantee high power, the device volume will be increased, which is not desirable for an integrated system. Furthermore, owing to their inferior stability and lifetime, batteries unavoidably require frequent replacements, meaning that they cannot be applied in devices such as bioimplant chips, biosensors, and harsh-environment sensors. [40,41] Silicon (Si), as the second most abundant element on Earth, has been a central platform of modern electronics owing to its low mass density and unique semiconductor properties. From an energy perspective, all-in-one integration of power supply systems onto Si-based functional devices is highly desirable, which inspires significant study ...

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