50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

Hiraki, Tatsurou; Aihara, Takuma; Maeda, Yoshiho; Fujii, T.; Tsuchizawa, Tai; Takahata, Kenichi; Kakitsuka, Takaaki; Matsuo, Shinji

doi:10.1109/ecoc48923.2020.9333206

Cited by 3 publications

(9 citation statements)

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“…Fig. 1(a) and (b) show cross-sectional and side views of the membrane InGaAsP EAM [12]. A 600-nm-wide InGaAsP MQW core is buried in a 230-nm-thick InP layer.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…2 shows the calculated changes in the absorption coefficient () of the InGaAsP single quantum-well layer with various lateral electric fields. In the calculation, we assumed a parabolic band model, and we did not consider excitons ionized by very low reverse bias [12]. The horizontal axis is wavelength detuning from the electron-heavyhole absorption edge of the MQW layer.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…We set the Si-core width to 440 nm, which provides a low loss and sufficient well for an absorption length of 300 m. It should be noted that we must design the optical confinement in the well layers with considering a trade-off relationship between the modulation efficiency and allowable input optical power, where electric field screening is caused by high-density photocarriers in the small absorption area [12]. The EAM also provides an over 50- Fig.…”

Section: Design and Fabricationmentioning

confidence: 99%

“…In our preliminary work [12], we demonstrated dynamic modulations for 112-Gbit/s 4-level pulse amplitude modulation (PAM4) signals at room temperature. In this paper, in addition to covering the previous results, we also characterize the EAM at 50°C.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, in addition to covering the previous results, we also characterize the EAM at 50°C. In the following sections, we first show the design and fabrication method of the proposed EAM [12]. Then, we describe experimental results for the on-chip loss and extinction ratio of the EAM at 25 and 50°C.…”

Section: Introductionmentioning

confidence: 99%

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50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Hiraki

Aihara

Maeda

et al. 2021

J. Lightwave Technol.

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We fabricate a membrane InP-based electroabsorption modulator (EAM), in which an InGaAsP-based multiple-quantum-well (MQW) absorption region is buried with an InP layer, on Si-waveguide circuits. By optical coupling between the MQW absorption region and Si core, a low-loss and large-absorption-length (300-m-long) supermode waveguide is designed to suppress electric-field screening at high optical input power. The EAM is fabricated by combining direct bonding of the MQW layer and regrowth of the InP layer on a thin InP template bonded on a silicon-on-insulator wafer. The fabricated membrane EAM shows an on-chip loss of less than 4 dB at wavelengths over 1590 nm and temperatures from 25 to 50°C. Since the membrane lateral p-i-n diode structure is beneficial for reducing the RC time constant of a lumped-electrode InP-based EAM, the EO bandwidth of the EAM is around 50 GHz without a 50-ohm termination up to fiber-input power of 10 dBm. Using the device, we demonstrate clear eye openings for 56-Gbit/s NRZ and 112-Gbit/s PAM4 signals at temperatures from 25 to 50°C.

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“…Fig. 1(a) and (b) show cross-sectional and side views of the membrane InGaAsP EAM [12]. A 600-nm-wide InGaAsP MQW core is buried in a 230-nm-thick InP layer.…”

Section: Design and Fabricationmentioning

confidence: 99%

Section: Design and Fabricationmentioning

confidence: 99%

Section: Design and Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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