60-GHz-bandwidth O-band Membrane InGaAlAs Electro-Absorption Modulator on Si Platform

Aihara, Takuma; Hiraki, Tatsurou; Maeda, Yoshiho; Fujii, T.; Tsuchizawa, Tai; Takahata, Kenichi; Kakitsuka, Takaaki; Matsuo, Shinji

doi:10.1109/gfp51802.2021.9674001

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…Here, we didn't assemble the 50-ohm termination at the EAM, and the maximum frequency was limited to 67 GHz by the experimental setup. We achieved an E-O bandwidth of 60 GHz even with the longest one (200 μm) [18]. The 200-μm-long EAM had a larger static FOM and E-O bandwidth than those of the previous membrane 300-μm-long EAM in the L band [14].…”

Section: A Stand-alone Membrane Eamsmentioning

confidence: 77%

Over-67-GHz-Bandwidth Membrane InGaAlAs Electro-Absorption Modulator Integrated With DFB Laser on Si Platform

Hiraki

Aihara

Maeda

et al. 2023

J. Lightwave Technol.

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We fabricate a membrane InGaAlAs electroabsorption modulator (EAM) integrated with a distributed feedback (DFB) laser combining direct wafer bonding and epitaxial regrowth of InP-based layers on a silicon-on-insulator wafer. Heterogeneous integration of an InP-based multiple-quantum-well (MQW) layer into the Si photonics simplifies the integration of the O-band EAMs and laser diodes (LDs). EAMs and LDs can be fabricated using the same MQW layer because of the wide operating range and the direct bandgap of the MQWs. A compact and high-speed lumped-electrode EAM can be made because the membrane lateral p-i-n diode structure has low capacitance and a large optical confinement factor. The effective-refractive-index matching between the membrane InP and Si layers enables the DFB laser to be fabricated with a low-loss supermode waveguide whose MQW core was optically coupled to the Si core. The fabricated 100-µm-long membrane EAM has a high modulation efficiency of about 3 dB/V at 1260 nm and E-O bandwidth of over 67 GHz even without a 50-ohm termination. The EAM-integrated DFB laser has a fiber coupled output power of about −2 dBm and clear eye openings with an extinction ratio of 3.8 and 3.2 dB for 100-and 112-Gbit/s non-return-to-zero signals, respectively.

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Section: A Stand-alone Membrane Eamsmentioning

confidence: 77%

Over-67-GHz-Bandwidth Membrane InGaAlAs Electro-Absorption Modulator Integrated With DFB Laser on Si Platform

Hiraki

Aihara

Maeda

et al. 2023

J. Lightwave Technol.

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“…Material strain-engineering in stratified media of quantum well and barrier layers, based on semiconductor alloys on silicon (Si) substrates, can enable the O-band modulation by exploiting the QCSE. QCSE modulators have been studied in p-i-n diode forms structured by III/V [14][15][16][17] and Si-Ge [18][19][20][21] stacks, with robust epitaxial growth techniques for the latter due to its inherent similarities with Si. However, even for the more mature Si-Ge stack a butt-coupling waveguide integration is challenging, mainly because of the difference in the core thickness of the passive and the active parts (220 nm in standard silicon-on-insulator (SOI) 5 , ∼ 400 nm-1000 nm in Si-Ge 22 ), while an evanescent coupling format with a Si-Ge taper is not easily controlled in terms of fabrication 18 .…”

Section: Introductionmentioning

confidence: 99%

Advancing Photonic Communications: High-Density Integration of a 100 Gb/s O-Band QCSE Modulator on Silicon Substrates

Skandalos,

Bucio,

Mastronardi

et al. 2024

Preprint

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With the growth of data-intensive artificial intelligence models and the roll-out of high-capacity 5G telecom networks, the use of ultra fast transceivers with low power consumption has become essential in data centres. Quantum-confined Stark effect (QCSE) modulators are one of the contender systems that offer the potential to achieve optical modulation at high data rate, whilst retaining low real estate, low power consumption and operation in the O-band. Such modulators can be fabricated using complementary metal-oxide semiconductor (CMOS) materials including Ge/SiGe multiple quantum-well (MQW) stacks grown on silicon (Si), and be integrated with silicon nitride (SiN) on a Si substrate to retain CMOS compatibility and potential for large scale manufacturing. Here we demonstrate an O-band 2.5×50 µm2 Ge/SiGe QCSE modulator butt-coupled to SiN waveguides on Si and silicon-on-insulator (SOI) substrates. With this novel waveguide integration technique and a high-index contrast waveguide interface that utilises anti-reflective coatings, coupling losses of less than 1 dB were achieved along with better than −13.58 dB back-reflection in the O-band. The static extinction ratio (ER) of the modulator remained unchanged in a 20-80 ◦C range achieving in excess of 5 dB, with a 3.01 dB dynamic ER at 50 Gb/s using an on-off keying (OOK) modulation scheme. The modulator also achieved a 100 Gb/s data rate with an ER of 2.28 dB and an average energy consumption of <70 fJ/bit, paving a way to fast and energy-efficient optical interconnects.

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Development of Membrane Optical Modulators for IOWN

Hiraki¹,

Aihara²,

Fujii³

et al. 2022

NTT Technical Review

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60-GHz-bandwidth O-band Membrane InGaAlAs Electro-Absorption Modulator on Si Platform

Cited by 3 publications

References 4 publications

Over-67-GHz-Bandwidth Membrane InGaAlAs Electro-Absorption Modulator Integrated With DFB Laser on Si Platform

Over-67-GHz-Bandwidth Membrane InGaAlAs Electro-Absorption Modulator Integrated With DFB Laser on Si Platform

Advancing Photonic Communications: High-Density Integration of a 100 Gb/s O-Band QCSE Modulator on Silicon Substrates

Development of Membrane Optical Modulators for IOWN

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