50‐3: Formation of Source and Drain Regions in Top‐Gate Self‐Aligned Oxide Semiconductor Field‐Effect Transistor

Abstract

Formation of source and drain regions in a top-gate self-aligned field-effect transistor and its mechanism were examined. A stack structure of silicon nitride and an oxide semiconductor (OS) is effective, and hydrogen trapped in oxygen vacancies in the OS and the presence of metallic indium at the interface are important. Author KeywordsTGSA; OS FET; short channel length; formation method of S-D regions; CAAC.

25‐1: Distinguished Paper: A Novel Ultra Large Size OLED Display for Premium TVs

“…In case of TFT backplane, Oxide TFTs have been used as OLED display backplanes, which are different from a-Si TFTs commonly used for LCDs. Its structure has been developed into a coplanar type with small and low parasitic capacitance to increase the pixel aperture ratio [4]. From a performance point of view, there were improvements in TFT characteristic and improvement in reliability characteristics [5].…”

P‐8: Analysis of Degradation Mechanism of Oxide Semiconductor FETs with High Tolerance to Intense NBTIS

“…Our research group previously reported on back-channel-etched (BCE) and top-gate self-aligned (TGSA) field-effect transistors (FETs) with oxide semiconductor (OS) active layers [1][2][3][4][5][6]. OSbased FET (OSFET) technologies have recently been widely applied.…”

9‐4: Fabrication of Oxide‐Semiconductor FETs with Submicron Channel Length

“…The authors previously developed OS FETs with back-channeletched (BCE) and top-gate self-aligned (TGSA) structures [1][2][3][4][5][6]. BCE OS FETs can be fabricated using fewer masks than those required for TGSA OS FETs.…”