4H-SiC Trench Schottky Diodes for Next Generation Products

Zhang, Qing Chun Jon; Duc, Jennifer; Mieczkowski, V.A.; Hull, Brett; Allen, Scott T.; Palmour, John W.

doi:10.4028/www.scientific.net/msf.740-742.781

Cited by 17 publications

(6 citation statements)

References 3 publications

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“…What's more, the W D of improved structure decreases from 0.5 µm (conventional TMBS) to 0.05 µm as shown in Fig. 4(c) due to a higher N N according to equation (9). As a consequence, the R JFET ,sp and R spread,sp of improved TMBS can be both reduced significantly according to equation (6) and 7to generate a much lower R on,sp .…”

Section: A Forward Characteristicsmentioning

confidence: 91%

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An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance

Cao

Bao

Wu³

et al. 2019

IEEE Access

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An improved 4H-SiC trench MOS barrier Schottky (TMBS) structure that can significantly reduce the specific on-resistance (R on,sp) is proposed in this paper. Compared with the conventional TMBS structure, an N-type region is added around the P+ shielding region and along the trench sidewall in the proposed structure, and the doping concentration is higher than that of the drift region. The JFET resistance, and spread resistance can both be reduced significantly during the forward bias to produce a much lower R on,sp , which have been verified through the numeric simulations and modeling analysis. The critical parameters (N-type region width and its doping concentration) of the proposed structure are mainly optimized by the ATLAS simulation tool. As a result, the breakdown voltage and leakage current of the improved structure remain basically unchanged compared with the conventional TMBS. However, the R on,sp and FoM (BV 2 /R on,sp) can be effectively improved by 41.9% and 70.9%, respectively. INDEX TERMS 4H-SiC, TMBS, JFET, analytical model, specific ON-resistance, electric field.

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Section: A Forward Characteristicsmentioning

confidence: 91%

“…Note that the P+ shielding region brings the PN junction depletion region, the R JFET ,sp must be considered [17], [18]. The PN junction depletion width (W D ) can be expressed by equation (9) that varies with V F .…”

Section: A Forward Characteristicsmentioning

confidence: 99%

An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance

Cao

Bao

Wu³

et al. 2019

IEEE Access

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“…Therefore, the tradeoff between forward and reverse characteristics are tight. Based on SiC JBS diode, SiC trenched junction barrier schottky (TJBS) diode is designed for larger design window to enable good reverse blocking and forward conduction capabilities at the same time [14,17]. The combined features of a good conduction characteristic, excellent reverse blocking characteristic, and robustness against process variations made the TJBS diode attractive for low-loss, high-voltage, and high-speed power applications [15,18].…”

Section: Introductionmentioning

confidence: 99%

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Wang

et al. 2020

MSF

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A novel silicon carbide (SiC) trenched schottky diode with step-shaped junction barrier is proposed for superior static performance and large design window. In the proposed diode, to improve tradeoff between specific on-resistance and surface peak electric field, the shape of the trenched-junction is modified to stair-step, without extra fabrication process. To investigate the performances of the SiC step-shaped trenched junction barrier schottky (SSTJBS) diode, numerical simulations are carried out through Silvaco TCAD. The results indicate that the proposed diode can accommodate highly doped drift region with no degradation of its reverse blocking characteristic. In comparison with the conventional SiC trenched junction barrier schottky (TJBS) diode, the proposed SiC SSTJBS diode shows a larger design window of drift region doping concentration from 7.9×1015cm-3 to 9.5×1015cm-3. In the design window, the specific on-resistance and surface peak electric field can be reduced by 12.9% and 11%, respectively.

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“…To reduce E s further, SiC SBDs that have a trench structure have been developed. [24][25][26] Figure 2 shows a schematic cross section of the trench JBS structure and electric field distribution in the depth direction. The trench JBS structure can reduce E s more effectively because the p + n junction is formed deeper than in the planar JBS structure.…”

Section: Introductionmentioning

confidence: 99%

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

Konishi¹,

Kameshiro²,

Yokoyama³

et al. 2017

Jpn. J. Appl. Phys.

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We investigated 4H-SiC trench junction barrier Schottky (JBS) diodes from the viewpoints of the tradeoff between the electric field at the Schottky contact interface (Es) and the forward voltage drop, the effect on reduction of reverse leakage current, and the device yield. By calculating Es, we found that the trench JBS structure can make Es one order of magnitude smaller than that of the planar JBS structure, when the bevel angle (θ) is set between 80 and 90°. Moreover, 600 V/50 A trench JBS diodes were fabricated, and their reverse leakage current at 600 V was made 102 times smaller than that of the planar JBS diode by effectively reducing Es. We also found that this reduction in reverse leakage current decreases the number of low breakdown voltage samples below 600 V and improves the yield.

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4H-SiC Trench Schottky Diodes for Next Generation Products

Cited by 17 publications

References 3 publications

An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance

An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance

SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

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