4D-3 A 2 GHz Reference Oscillator incorporating a Temperature Compensated BAW Resonator

Vanhelmont, F.; Philippe, Pascal; Jansman, A.B.M.; Milsom, R.F.; Ruigrok, J.J.M.; Oruk, A.

doi:10.1109/ultsym.2006.102

Cited by 28 publications

(12 citation statements)

References 5 publications

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“…Nowadays, hybrid and monolithic approaches are main-stream strategies in FBAR-to-CMOS integration. By means of hybrid integration, two systems located in separate substrates are typically integrated by wire-bonding or flip-chip [4], [5] technique. In monolithic integration, both FBAR and CMOS circuits [6]- [8] and passive components [9] are fabricated on the same substrate.…”

Section: Introductionmentioning

confidence: 99%

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Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

Campanella

Cabruja

Montserrat

et al. 2008

IEEE Electron Device Lett.

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A thin-film bulk acoustic wave resonator (FBAR) having a floating, 3-D structure above a CMOS substrate is presented. The integration of the FBAR to the CMOS substrate is performed with independence of FBAR or CMOS fabrication technologies. Wafer-level transfer is carried out to obtain a suspended FBAR above CMOS substrates of different technologies, whose resonant frequency is found in the 2.4 GHz band. The electrical interconnection between the FBAR and CMOS is provided by at least two conducting posts, which at the same time offer mechanical support to the resonator's structure. Experimental characterization results and Q-factor comparison with conventional FBAR technologies are discussed.Index Terms-Acoustic resonators, bulk acoustic wave devices, film bulk acoustic wave resonator (FBAR) , heterogeneous CMOS integration.

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Section: Introductionmentioning

confidence: 99%

“…Compared to standard flip-chip implementations [5], our method presents two main advantages: wafer-level integration Manuscript and no FBAR-carrying substrate attached to the resonator. This saves the long processing time of chip-level integration, since interconnection is performed prior to dicing.…”

Section: Introductionmentioning

confidence: 99%

Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

Campanella

Cabruja

Montserrat

et al. 2008

IEEE Electron Device Lett.

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“…An alternative to crystals can be to use Bulk Acoustic Wave (BAW) resonators. Thanks to their high quality factor and their high resonant frequency in the GHz range, RF oscillators with spectral purity equivalent to crystal oscillators can be achieved [1]. An advantage of BAW resonators is their small size, which, in the future, enables their integration into a single package together with the transceiver and into a single chip radio.…”

Section: Introductionmentioning

confidence: 99%

A 2GHz 65nm CMOS digitally-tuned BAW oscillator

Guillot¹,

Philippe²,

Berland

et al. 2008

2008 15th IEEE International Conference on Electronics, Circuits and Systems

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Abstract-The design of a 2GHz reference frequency oscillator in a 65nm CMOS process using a Bulk Acoustic Wave resonator is presented. The oscillator implements digital frequency control using a switched capacitor bank in parallel to the resonator. The tuning range is up to 4MHz with a minimum step of 1.6kHz. The oscillator core is designed to reach low phase noise (-128dBc/Hz at 100kHz offset) at low power consumption (0.9mW) using a differential topology. It is followed by a low noise divider for output at 500MHz with a phase noise of -140dBc/Hz at 100kHz offset.

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“…To achieve a good quality factor, an overlap (or frame) is used which necessitates type 1 dispersion [2], this means that the first extensional resonance mode "TE1" is superior to the second shear resonance mode "TS2" then confining the resonator energy at the targeted frequency. State-of-the-art TCF of BAW resonators is around -19 to -15 ppm/°C and of about 4 ppm/°C for a compensated BAW [3][4]. Very few thermal models for BAW resonators are described in the literature.…”

Section: Introductionmentioning

confidence: 99%

P0-15 Temperature Compensated Bulk Acoustic Wave Resonator and its Predictive 1D Acoustic Tool for RF Filtering

Petit

Abelé

Volatier

et al. 2007

2007 IEEE Ultrasonics Symposium Proceedings

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The design of Bulk Acoustic Wave "BAW" resonators should take into account the stringent requirements of thermal effects. In this paper, we propose a thermal model, allowing the reduction of the Temperature Coefficient of Frequency "TCF" with a slightly modified process while retaining a good coupling and quality factor. For a significant reduction of the TCF, a SiO 2 layer is added above the upper electrode. A TCF of +1.5 ppm/°C was obtained at 2.08 GHz. The present accuracy of the 1D model is approximately 1 ppm/°C. Most material parameters were extracted by comparison between the modeling and the measurement of BAW resonators with different stacks. To improve the dispersion of the TCF, the uniformity of each layer is introduced into the model. Firstly, the reduction of the top SiO 2 Bragg layer thickness dispersion from 2 % to 0.2 % is achieved, using an ion etching. The compensation of BAW resonators in our process has been improving for PCS diversity standard. This model was used to design a Personal Communications Service "PCS" RX diversity filter (1.93-1.99 GHz). The compensated loaded and unloaded resonators were used in the filtering function and present TCFs between 0.8 and -7 ppm/°C with a coupling factor of approximately 5.2 %.

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4D-3 A 2 GHz Reference Oscillator incorporating a Temperature Compensated BAW Resonator

Cited by 28 publications

References 5 publications

Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

Thin-Film Bulk Acoustic Wave Resonator Floating Above CMOS Substrate

A 2GHz 65nm CMOS digitally-tuned BAW oscillator

P0-15 Temperature Compensated Bulk Acoustic Wave Resonator and its Predictive 1D Acoustic Tool for RF Filtering

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