46.3: Ultra‐flat ITO Films for Light Emitting Polymer Applications

Abstract

The influence of process power, process pressure, discharge voltage and film thickness on electrical and morphological properties of low resistivity ITO films is presented. SEM images and AFM measurements show that flat ITO films for light emitting polymer applications with a RMS roughness of less than 1 nm can be prepared. The flat surface structure also improves the optical transmittance of ITO films being beneficial for light emitting polymer applications. The performance of light emitting polymer display devices using ultra-flat ITO films is correlated to the ITO process variation.

Effect of annealing on electrical, structural, and optical properties of sol–gel ITO thin films

“…Recently, much efforts has been paid to obtain high‐quality ITO films, these techniques require typically the use of a high substrate temperature (300–500 °C) during deposition or a post‐deposition annealing treatment of the films at high temperature (400–700 °C) 18–20. Besides that, for several optoelectronic device applications, it is required that the films should be highly smooth 21, which it is not the case for most ITO films, which present a high surface roughness 22. Minami 23 developed the transparent conducting in oxide thin films by using ITO substitutes.…”