45-2: Advanced OLED Display Technologies for Large-Size Semi-Flexible TVs

Shin, Hong-Jae; Park, Kwang-Mo; Takasugi, Shinji; Choi, Soo-Hong; Jeong, Yun-Sik; Choi, Hee-Dong; Kim, In-Jue; Kim, Han-Seop; Lee, Hyeon‐Woo; Oh, Chang‐Ho

doi:10.1002/sdtp.10759

Cited by 13 publications

(14 citation statements)

References 7 publications

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“…However, they are fabricated on a silicon wafer, thus requiring high fabrication cost. To reduce the fabrication cost, active‐matrix OLED (AMOLED) displays on a glass or flexible substrate can be used for HMDs . However, the image quality of the AMOLED displays has suffered from the electrical characteristic variations of driving thin‐film transistors (TFTs) fabricated on the low‐temperature polycrystalline silicon (LTPS) backplane, which has the irregular grain boundaries .…”

Section: Introductionmentioning

confidence: 99%

“…However, the image quality of the AMOLED displays has suffered from the electrical characteristic variations of driving thin‐film transistors (TFTs) fabricated on the low‐temperature polycrystalline silicon (LTPS) backplane, which has the irregular grain boundaries . To compensate for these electrical characteristic variations, the external compensation method, luminance adjusting algorithm, and diode‐connection scheme have been researched . The external compensation method and luminance adjusting algorithm increase the system cost because of the additional logic blocks and memories for sensing the electrical characteristic variations of the LTPS TFTs and modulating the data voltage.…”

Section: Introductionmentioning

confidence: 99%

“…To reduce the fabrication cost, active-matrix OLED (AMOLED) displays on a glass or flexible substrate can be used for HMDs. [3][4][5][6][7][8][9][10][11] However, the image quality of the AMOLED displays has suffered from the electrical characteristic variations of driving thin-film transistors (TFTs) fabricated on the lowtemperature polycrystalline silicon (LTPS) backplane, which has the irregular grain boundaries. 3 To compensate for these electrical characteristic variations, the external compensation method, luminance adjusting algorithm, and diodeconnection scheme have been researched.…”

Section: Introductionmentioning

confidence: 99%

“…3 To compensate for these electrical characteristic variations, the external compensation method, luminance adjusting algorithm, and diodeconnection scheme have been researched. [4][5][6][7][8][9][10][11][12] The external compensation method [4][5][6][7] and luminance adjusting algorithm 8 increase the system cost because of the additional logic blocks and memories for sensing the electrical characteristic variations of the LTPS TFTs and modulating the data voltage. Thus, the diode-connection scheme [9][10][11][12][13] has been widely used for small-sized AMOLED displays.…”

Section: Introductionmentioning

confidence: 99%

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An AMOLED pixel circuit for high image quality of 1000 ppi mobile displays in AR and VR applications

et al. 2018

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In this paper, an active‐matrix organic light‐emitting diode pixel circuit is proposed to improve the image quality of 5.87‐in. mobile displays with 1000 ppi resolution in augmented and virtual reality applications. The proposed pixel circuit consisting of three thin‐film transistors (TFTs) and two capacitors (3T2C) employs a simultaneous emission driving method to reduce the number of TFTs and the emission current error caused by variations in threshold voltage (Vth) and subthreshold slope (SS) of the low‐temperature polycrystalline silicon TFTs. Using the simultaneous emission driving method, the compensation time is increased to 90 μs from 6.5 μs achieved in the conventional six TFTs and one capacitor (6T1C) pixel circuit. Consequently, the emission current error of the proposed 3T2C pixel circuit was reduced to ±3 least significant bit (LSB) from ±12 LSB at the 32nd gray level when the variations in both the Vth and SS are ±4σ. Moreover, both the crosstalk errors due to the parasitic capacitances between the adjacent pixel circuits and due to the leakage current were achieved to be less than ±1 LSB over the entire gray level. Therefore, the proposed pixel circuit is very suitable for active‐matrix organic light‐emitting diode displays requiring high image quality.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An AMOLED pixel circuit for high image quality of 1000 ppi mobile displays in AR and VR applications

et al. 2018

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“…The internet of things, in which flat panel display (FPD) is utilized as an exchange platform of information, is useful in various applications, including medical health, artificial intelligence, cloud computing and big data [1]. Due to its fast response time, wide viewing, high contrast and low power consumption, active matrix organic light-emitting diode (AMOLED) has been proposed as a promising candidate for the development of next generation FPD [2].…”

Section: Introductionmentioning

confidence: 99%

67‐1: Invited Paper: Design of an Advanced Bottom‐emission AMOLED Display for TVs with High‐PPI and Large Size

Wu¹,

Xue²,

Han³

et al. 2019

Symp Digest of Tech Papers

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Top-gate typed amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors (TFTs) and a technologically advanced transparent storage capacitance structure have been successfully employed in pixel circuits. The design procedure was systematically studied. Eventually, a 15-inch gate-driver-on-array (GOA) drived active matrix organic light-emitting diode (AMOLED) display was demonstrated with a high resolution of 147 ppi.

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Thermally Evaporated Organic/Ag/Organic Multilayer Transparent Conducting Electrode for Flexible Organic Light‐Emitting Diodes

Bae

Kim

Lee

et al. 2019

Adv Elect Materials

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flexibility. In recent times, several prototypes of the flexible display based on OLED have been reported. [2][3][4] However, there are still some issues related to the fabrication of flexible OLEDs. Among the main concerns, securing transparent conducting electrode (TCE) with high mechanical flexibility as well as durability and good thermal stability are the most important issue. Generally, widely used TCE, Indiumtin-oxide (ITO) is not suitable for flexible display applications despite high transparency and conductivity due to its high rigidity. Therefore, to replace ITO, various types of flexible TCEs such as conducting metal oxide, [5][6][7] metal nanowire, [8,9] metal mesh, [10,11] carbon nanotube, [12,13] graphene, [14,15] and conducting polymers [16,17] have been reported.An ultrathin metal layer or sputter coinage metal, especially silver (Ag), with a thickness of about 10-14 nm is one of the noteworthy and alternative flexible TCEs because of its high transparency and low sheet resistance. The high ductility of the ultrathin metal layer makes it a flexible electrode to ensure high durability against the mechanical deformations. Moreover, it has a simple fabrication process which includes thermal deposition at room temperature using a fine metal mask without any patterning process for instance photo lithography. However, sole ultrathin Ag film with low resistivity and good uniformity cannot be formed accurately due to the Ag agglomeration, which induced by the stronger cohesion force between Ag clusters than the adhesion force of metal-substrate interface. [18][19][20][21] Typically, the Ag agglomeration aggravates the sheet resistance property owing to incomplete electrical path connection, as a result, low transmittance at the thickness of Ag with sufficiently low sheet resistance. To overcome this, metal oxide-based dielectricmetal-dielectric multilayer structures have been largely developed for optoelectronic devices. [22][23][24][25][26][27] Normally, the metal oxide-based binding/seed layer can reduce the coalescence between Ag clusters by increasing the interface adhesion force according to the bonding formation between Ag and oxygen. [21] However, metal oxide, especially molybdenum This paper reports an efficient, thermally stable, and high-performance flexible multilayer transparent conducting electrode (TCE) by sandwiching an ultrathin Ag layer between a thermally evaporated small-molecule organic wetting inducer, 1,4-bis(2-phenyl-1,10-phenanthrolin-4-yl)benzene and an organic antireflective capping layer, 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile for flexible organic light-emitting diodes (OLEDs). This TCE demonstrates a high transmittance of about 81.34% at 550 nm and very low sheet resistance of 9.51 Ω sq −1 with excellent thermal stability under high-temperature (100 °C for 72 h) conditions. These properties arise from the synergistic effect of coordinate bonding between the nitrogen of the phenanthroline moiety and the Ag atom which leads to a smooth and uniform Ag surface and the o...

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45-2: Advanced OLED Display Technologies for Large-Size Semi-Flexible TVs

Cited by 13 publications

References 7 publications

An AMOLED pixel circuit for high image quality of 1000 ppi mobile displays in AR and VR applications

An AMOLED pixel circuit for high image quality of 1000 ppi mobile displays in AR and VR applications

67‐1: Invited Paper: Design of an Advanced Bottom‐emission AMOLED Display for TVs with High‐PPI and Large Size

Thermally Evaporated Organic/Ag/Organic Multilayer Transparent Conducting Electrode for Flexible Organic Light‐Emitting Diodes

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