41.4: AMOLED based on Silicon‐On‐Glass (SiOG) Technology

Choi, Jae Beom; Chang, Young‐Jin; Shim, Seung‐Hwan; Chung, In-Do; Park, Keun Woo; Park, KeeChan; Moon, Kyung Chul; Min, Hoonkee; Kim, Chi-Woo; Gadkaree, K. P.; Couillard, J. G.; Cites, Jeffrey S.; Ahn, Sung Eun

doi:10.1889/1.2785570

Cited by 10 publications

(4 citation statements)

References 5 publications

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“…To find the best backplane for large size AMOLEDs, new technologies have been investigated extensively. These include advanced laser process such as SLS, advanced SPC, microcrystalline silicon, oxide TFTs, single crystalline silicon based on silicon-on-glass technology (Choi et al 2007b), and organic semiconductors (Jung et al 2008). Out of the extensive research for alternative backplane technologies, oxide TFT became another winning technology because of its good mobility and uniformity, excellent off current and scalability, and low cost manufacturing process.…”

Section: Summary and Future Developmentmentioning

confidence: 99%

Active Matrix for OLED Displays

2015

Handbook of Visual Display Technology

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Significant progress has been made in the past two decades in AMOLED displays. As current driven devices, OLEDs present tremendous challenge in developing the right active matrix backplanes. Various technologies have been and continue to be investigated for driving AMOLEDs. The start of mass production of small size AMOLEDs by Samsung in 2007 established LTPS as the leading backplane technology. However, the scaling of AMOLEDs for large TV applications demands a low-cost backplane technology. This need has propelled the intensive R&D work in oxide TFT backplane, leading to its commercialization in LG's 55 00 OLED TV in early 2013. In this chapter, active matrix for OLEDs will be discussed based on the type of backplane

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Section: Summary and Future Developmentmentioning

confidence: 99%

Active Matrix for OLED Displays

2015

Handbook of Visual Display Technology

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“…Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass continue to generate interest because of their applications in integrated circuits for activematrix liquid-crystal displays (LCDs), organic light emitting diode (OLED) displays (1), and the promise of higher circuit integration and lower power consumption towards advanced active-matrix display systems. To implement circuits with higher operational speed, TFTs with high field-effect mobility and short channel length are desired.…”

Section: Introductionmentioning

confidence: 99%

“…To implement circuits with higher operational speed, TFTs with high field-effect mobility and short channel length are desired. SLS (2) and CGS technologies were developed to yield TFTs with higher field-effect mobility compared to the excimer laser annealed (ELA) poly-Si TFTs (1). Unfortunately grain boundaries remain in these LTPS TFTs, which have adverse effects on mobility and uniformity, hence making them less ideal for uniform, high-speed integrated circuitry.…”

Section: Introductionmentioning

confidence: 99%

Low Voltage Driven CMOS Circuits Based on Silicon on Glass

Choi¹,

Choi

Park

et al. 2010

ECS Trans.

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Low voltage driven inverter, ring oscillator and shift registor circuits using n-and p-channel TFTs based on Corning® Siliconon-Glass (SiOG) substrates are studied. The field effect mobility of n-and p-channel TFTs fabricated in SiOG are 226 and 165 cm 2 /V·s, respectively. The TFTs exhibited symmetric threshold voltages of ± 1.1 V and gate voltage swings of 0.21 ~ 0.23 V/dec. The total propagation delay time of the CMOS inverter was 2.54 ns at a supply voltage of 7 V. In addition, the rise and fall times of the shift register were found to be 0.5 µs and 0.7 µs at a V DD of 7 V, respectively. This work demonstrates the the ability to realize high performance integrated CMOS circuits on SiOG substrates.

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“…qVGA AMOLED module based on an SiOG substrate backplane has been demonstrated. 9 High-performance integrated circuits on SiOG using pMOS technologies have also been reported. 10 To achieve high-circuit integration and fast switching in these applications, it is essential to minimize hot carrier (HC)-induced degradation, which is strongly dependent upon the electrical field in the TFT channel near the drain.…”

mentioning

confidence: 99%

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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Hot carrier (HC) instability of thin-film transistors (TFTs) fabricated on single-crystal,silicon-on-glass (SiOG) substrates is studied. The formation of the SiOG substrate is achieved by the transfer of a single-crystal silicon film to a display-glass substrate. The transfer process creates an in-situ barrier layer free of mobile ions in the glass adjacent the silicon film. The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with gate voltage swing values of 180 mV/decade, electron and hole mobilities of ∼ 251 and 201 cm2/V·s respectively, and threshold voltages of approximately −0.3 and −1.2 V for the n- and p-channel TFT’s respectively. While p-channel TFTs exhibit good stability, on-current degradation is observed in the transfer characteristics of the n-channel TFT. The degradation is due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure in the n-channel SiOG TFTs to minimize HC instability is reported. The LDD design incorporates 2 μm offset regions. The offset regions are lightly doped (n-) with phosphorus ions implanted at 10 keV. N-levels of ∼ 1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that reduce HC instability while minimizing degradation in the on-state device performance.

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41.4: AMOLED based on Silicon‐On‐Glass (SiOG) Technology

Cited by 10 publications

References 5 publications

Active Matrix for OLED Displays

Active Matrix for OLED Displays

Low Voltage Driven CMOS Circuits Based on Silicon on Glass

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

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