400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Chang, Shoou‐Jinn; Kuo, Chien-Nan; Su, Yan–Kuin; Wu, Liang; Sheu, Jinn-Kong; Wen, Ten‐Chin; Lai, Wei–Chi; Chen, J.R.; Tsai, J.M.

doi:10.1109/jstqe.2002.801677

Cited by 218 publications

(50 citation statements)

References 19 publications

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“…Gallium nitride with its wide band gap, has attracted tremendous attention because of its potential application to various opto-electronic devices, such as high performance light emitters [1][2][3][4][5][6]. These materials are also well suited for applications in high speed and high power electronic devices [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

El‐Naggar

2011

J Mater Sci: Mater Electron

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GaN films with different thicknesses were grown on Si(111) substrates by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE). The optical properties of the films were investigated using spectrophotometric measurements of the reflectance in the wavelength range 200-3,300 nm. With increasing film thickness, the refractive index (n) increased slightly, while the optical energy gap (E g ) changed with no specific trend. The structural properties of the grown films were studied at (002) reflections using two types of rocking curve measurements; normal rocking curve (x-scan) and triple axis rocking curve (x/2h-scan). The Full Width at Half Maximum (FWHM) of rocking curve decreased with increasing film thickness. Hall effect measurements showed that all the samples were n-type with carrier concentrations decreasing from 8.025 9 10 18 to 5.65 9 10 17 cm -3 , and mobility increasing from 14 to 110 cm 2 V -1 s -1 as increasing the film thickness from 590 to 1,420 nm, respectively. Photoluminescence (PL) spectra for the grown GaN films with different thicknesses were measured at room temperature. PL spectra for all the samples exhibited band edge (BE) emissions at peak energies of 3.24 eV, with peak intensities increased with increasing the film thickness.

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Section: Introductionmentioning

confidence: 99%

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

El‐Naggar

2011

J Mater Sci: Mater Electron

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“…Details of the relevant growths can be found elsewhere. 11,12 Prior to the growth, the Si(111) substrates were chemically cleaned using the modified Radio Corporation of America (RCA) method. The Si(111) substrates were dipped and boiled in acetone and isopropyl alcohol, with each step lasting 10 min, and put into a 2% HF solution thereafter for another 10 min, and then the substrates were rinsed in deionized water and then dried with nitrogen flow.…”

Section: Methodsmentioning

confidence: 99%

MOCVD Growth of InN on Si(111) with Various Buffer Layers

Huang

Chuang

Chang

et al. 2008

Journal of Elec Materi

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We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga 1-x N (x = 1 fi 0), and a high-temperature GaN. The resultant mobility of 275 cm 2 /V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.

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“…[6][7][8][9][10][11][12][13][14] During growth, the chamber pressure was controlled at 100-300 torr. Trimethylaluminum (TMAl), trimethylgallium (TMGa), trimethylindium (TMIn), and ammonia (NH 3 ) were used as aluminum, gallium, indium, and nitrogen sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

Wen

Chang

et al. 2003

Journal of Elec Materi

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High-quality InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) structures were prepared by a temperature-ramping method during metal-organic chemical-vapor deposition (MOCVD) growth. Two photoluminescence (PL) peaks, one originating from well-sensitive emission and one originating from an InGaN quasi-wetting layer on the GaN-barrier surface, were observed at room temperature (RT). The observation of high-order double-crystal x-ray diffraction (DCXRD) satellite peaks indicates that the interfaces between InGaN-well layers and GaN-barrier layers were not degraded as we increased the growth temperature of the GaN-barrier layers. With a 20-mA and 160-mA current injection, it was found that the output power could reach 2.2 mW and 8.9 mW, respectively. Furthermore, it was found that the reliability of the fabricated green LEDs prepared by temperature ramping was also reasonably good.

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400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Cited by 218 publications

References 19 publications

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

Effect of thickness on the structural and optical properties of GaN films grown on Si(111)

MOCVD Growth of InN on Si(111) with Various Buffer Layers

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

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