40 $\mu{\rm m}$ Flip-Chip Process Using Ag–In Transient Liquid Phase Reaction

Lin, Weitao; Sha, Chu-Hsuan; Lee, C. C.

doi:10.1109/tcpmt.2012.2186572

Cited by 22 publications

(6 citation statements)

References 11 publications

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“…Successful SLID bonds utilizing the Cu-Sn system have been carried out at temperatures around 300ºC [2,3,[8][9][10][11][12]. Additionally, several other binary material systems like, Ag-In [13][14][15], Au-In [16][17][18], Cu-In [19], Ag-Sn [20,21], Ni-Sn [22,23], and Au-Sn [24][25][26][27][28][29][30][31] have also demonstrated potential for SLID bonding. Most of these systems require bonding temperatures close to 300ºC, which already is clearly lower than the typical temperatures required in the most commonly utilized eutectic (like Al-Ge), anodic and glass-frit bonding processes [1].…”

Section: Introductionmentioning

confidence: 99%

Demonstrating 170 °C Low-Temperature Cu–In–Sn Wafer-Level Solid Liquid Interdiffusion Bonding

Vuorinen

Ross

Klami

et al. 2022

IEEE Trans. Compon., Packag. Manufact. Technol.

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The wafer-level Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature interconnections. The 100mm Si wafers had µ-bumps from 250µm down to 10µm fabricated by consecutive electrochemical deposition of Cu, Sn and In layers. The optimized wafer-level bonding processes were carried out by EV Group and Aalto University across a range of temperatures from 250C down to 170C. Even though some process quality related challenges were observed, it could be verified that high strength bonds with low defect content can be achieved even at a low bonding temperature of 170C with an acceptable 1-hour wafer-level bonding duration. The microstructural analysis revealed that the bonding temperature significantly impacts the obtained phase structure as well as the number of defects. A higher (250C) bonding temperature led to the formation of Cu3Sn phase in addition to Cu6(Sn,In)5 and resulted in several voids at Cu3Sn|Cu interface. On the other hand, with lower (200C and 170C) bonding temperatures the interconnection microstructure was composed purely of void free Cu6(Sn,In)5. The mechanical testing results revealed the clear impact of bonding quality on the interconnection strength.

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Section: Introductionmentioning

confidence: 99%

Demonstrating 170 °C Low-Temperature Cu–In–Sn Wafer-Level Solid Liquid Interdiffusion Bonding

Vuorinen

Ross

Klami

et al. 2022

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…Since TLP welding technology was proposed In the 1980s [5], TLP had been widely studied in the welding process of layered helpless flux, such as Sn-Cu [6], Sn-Ag [7], Sn-Au [8], In-Ag [9], etc., and was suitable for chip bonding process. The reason why layered TLP welding was not widely used was that it took more than 30 minutes to form a layered full-IMC solder joint.…”

Section: Introductionmentioning

confidence: 99%

Transient liquid phase bonding of Sn-Pb solder with added Cu particles

Wang,

Lin,

Yao

et al. 2024

J. Phys.: Conf. Ser.

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In this paper, the 1%-20% Cu particles were uniformly distributed in SnPb solder by mechanical mixing method to prepare composite solder. The solder was welded by eutectic welding and the high temperature failure test was carried out. The melting point and internal structure of solder were observed before reflow, after welding and after aging, and the existence of high-temperature resistant skeleton was found. It could be seen from the DSC curve that the solder absorption peak changes in a step-like manner, and the proportion of the high melting point absorption peak gradually increases with the aging process. The micro-structure of solder joints showed that a thin layer of IMC was formed around the Cu particles in the solder joints after welding, and the IMC in the solder joints had grown continuously until they contacted each other and formed a skeleton structure with aging. The skeleton structure improved the high temperature resistance of the solder joint. EDS analysis showed that the distribution of Cu element in the solder was similar to that of Sn, and the Pb element was enriched. The distribution of metal elements indicates that the solder joint was mainly composed of Cu6Sn5 IMC skeleton and Pb rich phase, and the solder component phase was high melting point component transformation.

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“…Ag, Au, Cu, Co or Ni), (3) intermetallic compounds (IMCs) formation that leads to isothermal solidification and (4) homogenization of the interconnection structure. Au-Sn and Cu-Sn based metallurgies are the most commonly utilized material options for SLID out of the several different demonstrated binary systems; Ag-In, [6][7][8] Au-In, 3,[9][10][11][12][13][14] Cu-In, 15 Ag-Sn, 16,17 Ni-Sn, 3,[18][19][20] Au-Sn [21][22][23][24][25][26][27][28] and Cu-Sn. 5,[29][30][31][32][33][34][35][36][37][38] Au-Sn and Cu-Sn systems have been demonstrated to form mechanically and chemically reliable bonds at bonding temperatures close to 300°C.…”

Section: Introductionmentioning

confidence: 99%

Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures

Vuorinen

Dong

Ross

et al. 2020

Journal of Elec Materi

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Wafer-level solid liquid interdiffusion (SLID) bonding, also known as transient liquid-phase bonding, is becoming an increasingly attractive method for industrial usage since it can provide simultaneous formation of electrical interconnections and hermetic encapsulation for microelectromechanical systems. Additionally, SLID is utilized in die-attach bonding for electronic power components. In order to ensure the functionality and reliability of the devices, a fundamental understanding of the formation and evolution of interconnection microstructures, as well as global and local stresses, is of utmost importance. In this work a low-temperature Cu-In-Sn based SLID bonding process is presented. It was discovered that by introducing In to the traditional Cu-Sn metallurgy as an additional alloying element, it is possible to significantly decrease the bonding temperature. Decreasing the bonding temperature results in lower CTE induced global residual stresses. However, there are still several open issues to be studied regarding the effects of dissolved In on the physical properties of the Cu-Sn intermetallics. Additionally, partially metastable microstructures were observed in bonded samples that did not significantly evolve during thermal annealing. This indicates the Cu-In-Sn SLID bond microstructure is extremely stable.

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40 $\mu{\rm m}$ Flip-Chip Process Using Ag–In Transient Liquid Phase Reaction

Cited by 22 publications

References 11 publications

Demonstrating 170 °C Low-Temperature Cu–In–Sn Wafer-Level Solid Liquid Interdiffusion Bonding

Demonstrating 170 °C Low-Temperature Cu–In–Sn Wafer-Level Solid Liquid Interdiffusion Bonding

Transient liquid phase bonding of Sn-Pb solder with added Cu particles

Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures

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