2009 IEEE International Electron Devices Meeting (IEDM) 2009
DOI: 10.1109/iedm.2009.5424383
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4-terminal relay technology for complementary logic

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Cited by 115 publications
(96 citation statements)
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“…In terms of device structure and operation, a MEM relay designed for digital logic applications [10] is very similar to relays designed for radio-frequency (RF) signal switching applications [12]- [15]. However, the contact resistance (R on ) for a logic relay can be as high as 10 kΩ (for a load capacitance of 10-100 fF) because the switching delay of a relay-based circuit is dominated by the mechanical pull-in time (t pi , typically 10-100 ns) rather than the electrical charging/discharging delay (t RC ) [8], [11].…”
Section: Introductionmentioning
confidence: 99%
“…In terms of device structure and operation, a MEM relay designed for digital logic applications [10] is very similar to relays designed for radio-frequency (RF) signal switching applications [12]- [15]. However, the contact resistance (R on ) for a logic relay can be as high as 10 kΩ (for a load capacitance of 10-100 fF) because the switching delay of a relay-based circuit is dominated by the mechanical pull-in time (t pi , typically 10-100 ns) rather than the electrical charging/discharging delay (t RC ) [8], [11].…”
Section: Introductionmentioning
confidence: 99%
“…The contacting electrode material initially was tungsten (W) and later changed to ruthenium (Ru) and other materials for improved Rc stability [47,48]. Although the in-plane dimensions of this relay are in the micrometer range, the as-fabricated contact gap thickness (gd) is in the nanoscale range [44]. Operating (gate voltage) lower than 1 V has been enabled by applying a body bias voltage [48] with a turn-on delay below 1 µs.…”
Section: Other Relays Fabricated Using Cmos-compatible Processesmentioning
confidence: 99%
“…The logic relay developed at UC Berkeley is comprised of a movable body electrode formed in a layer of polycrystalline silicon-germanium to which a conductive strip of metal (the "channel") is attached via an insulating layer of aluminum-oxide ( Figure 7) [44][45][46]. Two variations of this insulated-body relay design, 4T and 6T, have been reported.…”
Section: Other Relays Fabricated Using Cmos-compatible Processesmentioning
confidence: 99%
“…NEM relays are composed of 4 terminals like MOSFET devices. However, in NEM relays, the mechanical channel is actuated by electrostatic force, instead of the electrical channel [2][3][4][5][6]. When the channel is turned off in NEM relays, it is disconnected mechanically from the both source and drain.…”
Section: Introductionmentioning
confidence: 99%