4.343-Gbit/s Green Semipolar (20-21) μ-LED for High Speed Visible Light Communication

Chang, Yun-Han; Huang, Yu-Ming; Gunawan, Wahyu Hendra; Chang, Guei-Yuan; Liou, Fang-Jyun; Chow, Chi‐Wai; Kuo, Hao‐Chung; Liu, Yang; Yeh, Chien‐Hung

doi:10.1109/jphot.2021.3092878

Cited by 27 publications

(13 citation statements)

References 23 publications

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“…In recent years, only micro-LED has been able to satisfy the high-resolution requirements of popular near-eye displays such as virtual reality (VR) and augment reality (AR) by offering high brightness [6,7], enhanced robustness, longer lifetimes and smaller form factors. In addition, micro-LEDs are also game-changing technology for a variety of different applications [8,9], ranging from large-area displays and televisions to mobile phones, smartwatches, automotive panels, visible light communication (VLC) [10,11], and flexible lighting. However, for micro-LEDs with a size below 80 µm, the substrate must be removed to minimize the overall dimensions.…”

Section: Introductionmentioning

confidence: 99%

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

et al. 2021

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Quantum dot (QD)-based RGB micro-LED technology is seen as one of the most promising approaches towards full color micro-LED displays. In this work, we present a novel nanoporous GaN (NP-GaN) structure that can scatter light and host QDs, as well as a new type of micro-LED array based on an NP-GaN embedded with QDs. Compared to typical QD films, this structure can significantly enhance the light absorption and stability of QDs. As a result, the green and red QDs exhibited light conversion efficiencies of 90.3% and 96.1% respectively, leading to improvements to the luminous uniformity of the green and red subpixels by 90.7% and 91.2% respectively. This study provides a viable pathway to develop high-uniform and high-efficient color conversion micro-LED displays.

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Section: Introductionmentioning

confidence: 99%

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

et al. 2021

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“…The developed high-performance semipolar (202̅1) green micro-LED achieves a 756 MHz E-O bandwidth . Subsequently, multiple 50 μm green micro-LEDs with a 2 × 3 array are paralleled to achieve 3.129 and 4.343 Gbps OFDM transmission over a 0.25 m free-space link, respectively. , Then, a pair of green micro-LEDs with a 2 × 2 array and nanostructured grating patterns is packaged together to achieve a data rate beyond 5 Gbps . Micro-LEDs based on the wetting-layer or self-assembly quantum dots photoluminescence have been proposed recently, and they provide a new direction for the design of high-performance micro-LED devices that break the efficiency and bandwidth bottlenecks. − UOWC and multiuser VLC are proposed consecutively and proved the feasibility of building customized high-capacity VLC links in different scenarios. , Following the above-reported works, we will focus on further improving the E-O bandwidth of green micro-LED by using InGaN quantum dots (QDs) as the active region and using the packaged single-pixel micro-LED as the light source in a multigigabit VLC link.…”

Section: Introductionmentioning

confidence: 99%

“…49 Subsequently, multiple 50 μm green micro-LEDs with a 2 × 3 array are paralleled to achieve 3.129 and 4.343 Gbps OFDM transmission over a 0.25 m freespace link, respectively. 50,51 Then, a pair of green micro-LEDs with a 2 × 2 array and nanostructured grating patterns is packaged together to achieve a data rate beyond 5 Gbps. 52 Micro-LEDs based on the wetting-layer or self-assembly quantum dots photoluminescence have been proposed recently, and they provide a new direction for the design of high-performance micro-LED devices that break the efficiency and bandwidth bottlenecks.…”

Section: ■ Introductionmentioning

confidence: 99%

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

et al. 2022

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Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications in high-speed visible light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime in InGaN quantum well (QW), which is a fundamental problem limiting the data rate of high-speed VLC systems. In order to achieve an over GHz E-O bandwidth for applicable packaged LEDs, it is necessary to innovate from the material level in the active region. This work aims to break through the modulation bandwidth bottleneck of VLC systems based on green micro-LED. Commercial LEDs suffer a very limited E-O bandwidth due to their long radiative recombination carrier lifetime and large resistance-capacitance delay. Herein, by the utilization of green InGaN quantum dots (QDs) as the active region of micro-LED, this constraint can be remarkably alleviated. Green micro-LEDs containing five layers of InGaN QDs are fabricated, packaged, and then applied in a line-of-sight (LOS) VLC system over a 2 m free-space channel. The VLC system based on a single-pixel 50 and 75-μm diameter green micro-LEDs can achieve high modulation bandwidths up to 1.22 and 1.14 GHz, respectively. Then, real-time non-return-to-zero on–off keying (NRZ-OOK) and offline pulse-amplitude modulation four-level (PAM-4) as two common schemes in short-distance optical communication are adopted to evaluate the VLC system performances. A real-time 2.1 Gbps NRZ-OOK and an offline 5 Gbps PAM-4 VLC links are achieved with BERs of 2.74 × 10–3 and 1.88 × 10–3 above the forward error correction (FEC) criterion of 3.8 × 10–3, respectively. To the best of our knowledge, this is the highest-recorded modulation bandwidth and communication rate for a single-pixel green micro-LED-based VLC system.

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“…Compared with the widely reported blue micro-LED, the "green gap" problem caused by the high In composition of multiple quantum wells (MQWs) has always hindered the realization of highperformance GaN-based green micro-LEDs [10] . In recent years, semi-polar or non-polar green micro-LEDs have been gradually investigated, which are expected to avoid the drawbacks caused by conventional epitaxy growth on the c-plane substrate [11,12] . Data rates beyond 5 Gbit/s have been achieved by parallel arrays of semi-polar green micro-LEDs [13] .…”

Section: Introductionmentioning

confidence: 99%

Visible light communication system at 3.59 Gbit/s based on c-plane green micro-LED

Lin

Guo

et al. 2022

中国光学快报

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Visible light communication (VLC) based on the micro light emitting diode (micro-LED) has attracted increasing attention owing to its high bandwidth, low power consumption, and high security. Compared with semi-polar or non-polar micro-LEDs, the commercial polar micro-LED has the advantages of low cost and more mature epitaxy technique. In this study, green micro-LEDs with different indium tin oxide (ITO) sizes are fabricated based on the commercial c-plane LED epitaxial wafer. The transmission performance of 80, 100, and 150 μm devices has been studied in detail. A partial pre-equalization scheme is utilized to increase data rates. Finally, the VLC system with a 100 μm green micro-LED as the transmitter could achieve a maximum data rate of 3.59 Gbit/s. Such a result will be beneficial to promote the further development of low-cost, high-speed VLC devices in the future.

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4.343-Gbit/s Green Semipolar (20-21) μ-LED for High Speed Visible Light Communication

Cited by 27 publications

References 23 publications

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

Visible light communication system at 3.59 Gbit/s based on c-plane green micro-LED

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