4.2: Invited Paper : Development of High Mobility Zinc Oxynitride Thin Film Transistors

Zhang

Symp Digest of Tech Papers

et al. 2014

Section: Znon Film Deposition and Electrical Propertiesmentioning

confidence: 94%

P‐2: High Mobility Zinc Oxynitride TFT for AMOLED

Zhang

Symp Digest of Tech Papers

et al. 2014

“…Actually, the TFT mobility of a-IGZO is around 10cm 2 /Vs, which is relatively lower compared with the high carrier concentration (10 8 /cm 3 ). Dr Yan [3] have reported a possible reason for the relative low mobility of a-IGZO, and pointed out a new mechanism to increase the mobility of oxide TFTs. In amorphous multi-metal oxides, due to the different ions radius and ions potentials of metal ions, there should exist some potential barrier between neighboring ions, which would suppress electron transport and low the mobility, as illustrated in Figure 2.…”

Section: The Reason For the Development Of Znonmentioning

confidence: 99%

“…Yan [3] still reported that, as anions ions, such as N, doped into oxide, such as ZnO, could form ZnON material. The doped N ions could only have effect on value band, and the single metal ion of Zn 2+ can suppress the formation of potential barrier in conduction band, which is favor for high mobility.…”

Section: The Reason For the Development Of Znonmentioning

confidence: 99%

“…Therefore, increasing demands for high field effect mobility and high switching or driving performance with low cost are urgently needed. In the present article, the Hall mobility of zinc oxynitride (ZnON) film was exceed 100 cm 2 /Vs by changing the deposition conditions [3][4][5][6], and the saturation mobility of ZnON TFT was extracted and measured to be 50 cm 2 /Vs. The ZnON TFTs show superior I-V performance and BP uniformity.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

51.2: The Development of a High Mobility Zinc Oxynitride TFT for AMOLED

Yan

Symp Digest of Tech Papers

Zhang

et al. 2015

Journal of Applied Physics

“…a-IGZO based TFTs have found application in various areas, such as large area AMOLED displays 21,22 , high-resolution photo-sensors 23,24 , flexible TFTs 25,26 , interactive displays 27,28 etc. However, it is claimed that due to the presence of multiple cations of different ionic sizes, the electronic conduction path is hindered, which limits the carrier mobility 29 . As an alternative to multi-cation amorphous metal oxides, a multi-anion approach towards amorphous semiconductors has been proposed and is being investigated experimentally and computationally [29][30][31][32][33][34][35][36] .…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors

Srivastava

Nahas

Bhowmick

et al. 2019

Self Cite

Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO) has been researched extensively and is now being used in commercial applications. It is proposed in the literature that overlapping In-5s orbitals form the conduction path and the carrier mobility is limited due to the presence of multiple cations which create a potential barrier for the electronic transport in a-IGZO semiconductors. A multi-anion approach towards amorphous semiconductors has been suggested to overcome this limitation and has been shown to achieve hall mobilities up to an order of magnitude higher compared to multi-cation amorphous semiconductors. In the present work, we compare the electronic structure and electronic transport in a multi-cation amorphous semiconductor, a-IGZO and a multi-anion amorphous semiconductor, a-ZnON using computational methods. Our results show that in a-IGZO, the carrier transport path is through the overlap of outer s-orbitals of mixed cations and in a-ZnON, the transport path is formed by the overlap of Zn-4s orbitals, which is the only type of metal cation present. We also show that for multi-component ionic amorphous semiconductors, electron transport can be explained in terms of orbital overlap integral which can be calculated from structural information and has a direct correlation with the carrier effective mass which is calculated using computationally expensive first principle DFT methods.arXiv:1812.11333v3 [cond-mat.mtrl-sci]