2023
DOI: 10.1109/jstqe.2023.3238290
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3D Integrated Laser Attach Technology on a 300-mm Monolithic CMOS Silicon Photonics Platform

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Cited by 11 publications
(1 citation statement)
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“…In this section, we will first examine each component individually where the theoretical background and simulation results will be presented. [37]; Electric field distribution of the fundamental TE mode of a DC for a symmetric (top row) and asymmetric (bottom row) geometry for (b) a cross-section of 400 nm width, and 250 nm gap, and (c) a cross-section of 300 nm width, and 200 nm gap. The term BEOL refers to the back-end-of-the-line.…”
Section: Device Design and Simulationmentioning
confidence: 99%
“…In this section, we will first examine each component individually where the theoretical background and simulation results will be presented. [37]; Electric field distribution of the fundamental TE mode of a DC for a symmetric (top row) and asymmetric (bottom row) geometry for (b) a cross-section of 400 nm width, and 250 nm gap, and (c) a cross-section of 300 nm width, and 200 nm gap. The term BEOL refers to the back-end-of-the-line.…”
Section: Device Design and Simulationmentioning
confidence: 99%