We investigated the thermolytic growth of molybdenum disulfide thin films for solar cell applications. The thin films were spin‐coated and thermally annealed, and they showed a sulfur‐deficient nanosheet structure with various spectral emissions. The intrinsic thin films were used to form heterostructures in silicon solar cells. Two types of Si solar cells were fabricated using a MoS2/p‐Si heterojunction structure and MoS2/SiOx/pn‐Si tunneling structure. The former heterojunction cell did not show photovoltaic cell character. However, the later oxide tunneling cell showed a short‐circuit current of 8.23 A, an open‐circuit voltage of 0.602 V, and a conversion efficiency of 14.6%. This indicates that the sulfur defect‐induced MoS2 thin film showed an n‐type Ohmic character, but it might not form a stable interfacial charge depletion layer with p‐Si wafers in large‐scale cell fabrication.This article is protected by copyright. All rights reserved.