3D electro-thermal simulations of bulk FinFETs with statistical variations

Wang, L.; Brown, Andrew R.; Nedjalkov, Mihail; Alexander, Craig; Cheng, Binjie; Millar, C.; Asenov, A.

doi:10.1109/sispad.2015.7292271

Cited by 4 publications

(5 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We have presented a progressive study of coupled electro-thermal simulation for both SOI FinFET and bulk FinFET, investigating the impact of lattice temperature gradient on the Id-Vg characteristic of the uniform devices [6]. In this paper, we further investigate the 3D coupled electro-thermal simulation for FinFET with statistical variations.…”

Section: Simulation Results For a Soi Finfet Examplementioning

confidence: 99%

See 1 more Smart Citation

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

Wang

Brown

Nedjalkov

et al. 2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Self Cite

View full text Add to dashboard Cite

Thermal and electrical transport in FinFET with statistical variations is investigated by 3D coupled electro-thermal simulation, using statistical-variabilityaware device simulator GARAND with built-in thermal simulation module. The module employs a new formula for the calculation of the thermal conductivity in the fin region with fin shape dependence. An SOI FinFET structure with combined statistical sources of GER, FER and MGG is studied, with a focus on the lattice temperature profile and the statistical distribution of on current.

show abstract

Section: Simulation Results For a Soi Finfet Examplementioning

confidence: 99%

“…Recently we have developed a thermal simulation module, implemented in GARAND, and studied the lattice temperature profile and device performance on a SOI FinFET and a bulk FinFET example [6]. As a further step, in this paper, we investigate the 3D coupled electro-thermal simulation for FinFET with statistical variations.…”

Section: Introductionmentioning

confidence: 99%

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

Wang

Brown

Nedjalkov

et al. 2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Self Cite

View full text Add to dashboard Cite

show abstract

“…We select the FinFET as a representative example of transistors and employed GiftBTE to predict its temperature distribution. The structure and boundary conditions of the FinFET are illustrated in figure 6(a), which are adapted from a previous study [72]. The thermalizing boundary, in contact with the metal electrode (source and drain) or away from the hot spot (substrate) [10,73], is set at 300 K to simulate a room temperature environment [74].…”

Section: Temperature Rise Of Finfetmentioning

confidence: 99%

“…The thermalizing boundary, in contact with the metal electrode (source and drain) or away from the hot spot (substrate) [10,73], is set at 300 K to simulate a room temperature environment [74]. The diffusely reflecting boundary is set at the boundary in contact with the dielectric layer [72]. The other boundaries are set as specularly reflecting boundaries to mimic the symmetric boundary between devices [54,55].…”

Section: Temperature Rise Of Finfetmentioning

confidence: 99%

GiftBTE: an efficient deterministic solver for non-gray phonon Boltzmann transport equation

Hu,

Jia,

et al. 2023

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Advances in nanotechnology have facilitated the exploration of submicron thermal transport. At this scale, Fourier's law is no longer applicable, and the governing equation for thermal transport is the phonon Boltzmann transport equation (BTE). However, the availability of open-source solvers for the phonon BTE is limited, impeding progress in this field. This study introduces an open-source package, GiftBTE, for numerically solving the non-gray phonon BTE. GiftBTE employs deterministic solutions and provides both steady-state and transient solvers. For the steady-state solver, GiftBTE employs the implicit discrete ordinates method (DOM) with second-order spatial accuracy and the synthetic iterative scheme. For the transient solver, GiftBTE employs the explicit DOM with second-order spatial accuracy. This package demonstrates excellent computational efficiency, enabling realistic three-dimensional simulations of devices and materials. By interfacing with first-principles calculations, this solver enables parameter-free computation of submicron thermal transport. The application of GiftBTE includes, but is not limited to, computing the thermal conductivity of nanostructures, predicting temperature rises in transistors, and simulating laser heating processes.

show abstract

“…Recently, the thermal simulation module in the GSS 'atomistic' simulator GARAND [6] has been enhanced to capture accurately the fin geometry dependence of the thermal conductivity [7][8]. In this paper, GARAND is used to investigate the electro-thermal performance of SOI FinFETs under different external thermal resistances connected to the gate.…”

Section: Introductionmentioning

confidence: 99%

Simulation analysis of the electro-thermal performance of SOI FinFETs

Wang

Sadi

Brown

et al. 2016

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

Self Cite

View full text Add to dashboard Cite

Abstract-The GSS 'atomistic' simulator GARAND has been enhanced with a thermal simulation module to investigate the impact of self-heating on FinFET DC operation. This thermal simulation module is based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, which is developed for the benefit of computational efficiency. A new formula for the calculation of the thermal conductivity in the fin region is employed considering both fin shape and temperature dependencies. The heat dissipation through the gate is treated by nonhomogeneous Neumann boundary conditions. The electrothermal simulation results for an SOI FinFET example, designed to meet the specifications for the 14/16nm CMOS technology generation, are presented. The lattice temperature profiles under different external thermal resistances connected to the gate and the corresponding Id-Vg characteristics are investigated and analysed.

show abstract

3D electro-thermal simulations of bulk FinFETs with statistical variations

Cited by 4 publications

References 10 publications

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

3D coupled electro-thermal simulations for SOI FinFET with statistical variations including the fin shape dependence of the thermal conductivity

GiftBTE: an efficient deterministic solver for non-gray phonon Boltzmann transport equation

Simulation analysis of the electro-thermal performance of SOI FinFETs

Contact Info

Product

Resources

About