Proceedings of 7th International Conference on VLSI Design
DOI: 10.1109/icvd.1994.282713
|View full text |Cite
|
Sign up to set email alerts
|

3D effects in VLSI/ULSI MOSFETs: a novel analytical approach to model threshold voltage

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 11 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?