3D 65nm CMOS with 320&amp;#x00B0;C microwave dopant activation

Lee, Yao-Jen; Lu, Yu-Lun; Hsueh, Fu-Kuo; Huang, Kuo-Chin; Wan, Chia-Chen; Cheng, Tz-Yen; Han, Ming-Hung; Kowalski, Jeff M.; Kowalski, Jeff E.; Heh, D.; Chuang, Hsi-Ta; Li, Yiming; Chao, Tien−Sheng; Wu, Ching‐Yi; Yang, Fu-Liang

doi:10.1109/iedm.2009.5424426

Cited by 12 publications

(14 citation statements)

References 6 publications

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“…It has been shown that under this treatment GeO volatilization and Ge 2+ defects are suppressed [84], indicating also that the two defects may be related, i.e., one may be the precursor of the other. High pressure oxidation followed by low temperature oxygen annealing results in good quality GeO 2 [90,91]. The same is true for GeO 2 obtained by thermal oxidation at 450 • C [78,79] combined with an Al 2 O 3 highk cap [78,92] and by ozone oxidation [79,92], yielding a low density of states D it ∼ 1 × 10 11 cm −2 V −1 (or below) and some of the best Ge p-and n-MOSFETs.…”

Section: Extrinsic Defects and Passivation Of The Germanium Surface Amentioning

confidence: 66%

“…It was realized that it is essential to minimize or eliminate the defects in order to improve the quality of MOS devices. One way to do this is by high pressure oxidation using > 40 Atm of O 2 [84,90,91]. It has been shown that under this treatment GeO volatilization and Ge 2+ defects are suppressed [84], indicating also that the two defects may be related, i.e., one may be the precursor of the other.…”

Section: Extrinsic Defects and Passivation Of The Germanium Surface Amentioning

confidence: 99%

“…Nevertheless, rareearth and other trivalent element oxides like Y 2 O 3 can be combined with GeO 2 to obtain improved properties of the gate stacks. It has been suggested [109] that the formation of YGeO x between GeO 2 and Y 2 O 3 suppresses the volatilization of GeO and speculated [91] that possible diffusion of Y atoms in GeO 2 improves the quality of GeO 2 resulting in the so called "valency passivation" according to which trivalent Y atoms substitute tetravalent Ge atoms with one unsaturated bond at defect sites. A GeO 2 interface layer with few Y atoms combined with a Y 2 O 3 cap has given the best mobility results in Ge n-MOSFET devices [91].…”

Section: Extrinsic Defects and Passivation Of The Germanium Surface Amentioning

confidence: 99%

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Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

Chroneos

Schwingenschlögl

2012

Annalen der Physik

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In recent years germanium has been emerging as a mainstream material that could have important applications in the microelectronics industry. The principle aim of this study is to review investigations of the diffusion of technologically important p‐ and n‐type dopants as well as surface and interface passivation issues in germanium. The diffusion of impurities in germanium is interrelated to the formation of clusters whenever possible, and possibilities for point defect engineering are discussed in view of recent results. The importance of electrically active defects on the Ge surface and interfaces is addressed considering strategies to suppress them and to passivate the surfaces/interfaces, bearing in mind their importance for advanced devices.

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Section: Extrinsic Defects and Passivation Of The Germanium Surface Amentioning

confidence: 66%

Section: Extrinsic Defects and Passivation Of The Germanium Surface Amentioning

confidence: 99%

Section: Extrinsic Defects and Passivation Of The Germanium Surface Amentioning

confidence: 99%

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Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

Chroneos

Schwingenschlögl

2012

Annalen der Physik

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“…Microwave annealing increases the molecular rotational and polarization energies of dopants for activation [6], [7]. Microwave annealing is performed at low temperature, which suppresses the diffusion of dopants.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

Jhan

Wang

et al. 2015

IEEE Electron Device Lett.

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Unlike the high-temperature activation of dopants, such as rapid thermal annealing (RTA), the activation of dopants by low-temperature microwave annealing (MWA) suppresses their diffusion, reducing screening tunneling length (λ). This letter compares low-temperature (490°C) MWA with high-temperature (1050°C) RTA of a fin-shaped polycrystalline silicon (Poly-Si) tunnel field-effect transistor (TFET). The band-to-band tunneling voltage (V BTBT ) indicates clearly that TFET annealed by MWA had a lower λ than TFET that was annealed by RTA. The TFET that was annealed by MWA had a high ON/OFF current ratio of 10 8 , a low subthreshold swing, and an almost negligible drain-induced barrier lowering.Index Terms-Tunnel field-effect transistor (TFET), microwave annealing (MWA), screening tunneling length (λ), band-to-band tunneling (BTBT).

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“…Microwave heating has the potential to benefit growing high-quality polycrystalline silicon via amorphous silicon (a-Si) thin films with low annealing temperature and short processing time for the application of thin-film transistors and solar cells [1][2][3][4][5][6]. The study of microwave heating for the crystallization of a-Si thin film has therefore become very intensive recently.…”

Section: Introductionmentioning

confidence: 99%

Microwave annealing effect on the resistivity of doped hydrogenated amorphous silicon on glass

Chen

Chang

Lee

2011

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

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We employed a 5.8 GHz microwave annealing (MWA) to electrically activate the doped hydrogenated amorphous silicon (a-Si:H) thin films on glass. As compared with traditional rapid thermal annealing (RTA), MWA can electrically activate better the doped a-Si films at low annealing temperature and short processing time and effectively reduce their resistivity. The longer annealing time for MWA is better.

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3D 65nm CMOS with 320°C microwave dopant activation

Cited by 12 publications

References 6 publications

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor

Microwave annealing effect on the resistivity of doped hydrogenated amorphous silicon on glass

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