37.2-to-42.0 GHz VCO with -93.4 dBc/Hz Phase Noise for FMCW Radar in 22 nm FDSOI

Szilágyi, László; Li, Songhui; Xu, Xin; Testa, Paolo Valerio; Seidel, Andres; Carta, Corrado; Ellinger, Frank

doi:10.23919/eumic50153.2022.9783759

Cited by 4 publications

(2 citation statements)

References 16 publications

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“…Simultaneously fulfilling both S/MR and LR applications calls for VCOs with a low PN and a wide TR, whose design is very challenging due to the relatively low Q-factor of the LC resonators at mm-wave and the high parasitic capacitance of large transistors required to sustain the oscillation. Moreover, the high conversion gain (kVCO) in wide-band VCOs [46,47] reduces the VCO PN performance due to a high AM-to-PM conversion [48] and makes it very difficult to address both LR and S/MR applications with the same local oscillator. However, wide TR and low PN are not simultaneously required.…”

Section: Transformer-based Vcomentioning

confidence: 99%

CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

Papotto,

Parisi,

Finocchiaro

et al. 2024

Electronics

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This paper presents recent results on CMOS integrated circuits for automotive radar sensor applications in the 77 GHz frequency band. It is well demonstrated that nano-scale CMOS technologies are the best solution for the implementation of low-cost and high-performance mm-wave radar sensors since they provide high integration level besides supporting high-speed digital processing. The present work is mainly focused on the RF front-end and summarizes the most stringent requirements of both short/medium- and long-range radar applications. After a brief introduction of the adopted technology, the paper addresses the critical building blocks of the receiver and transmitter chain while discussing crucial design aspects to meet the final performance. Specifically, effective circuit topologies are presented, which concern mixer, variable-gain amplifier, and filter for the receiver, as well as frequency doubler and power amplifier for the transmitter. Moreover, a voltage-controlled oscillator for a PLL efficiently covering the two radar bands is described. Finally, the circuit description is accompanied by experimental results of an integrated implementation in a 28 nm fully depleted silicon-on-insulator CMOS technology.

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Section: Transformer-based Vcomentioning

confidence: 99%

CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications

Papotto,

Parisi,

Finocchiaro

et al. 2024

Electronics

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“…Nevertheless, designing a VCO able to address both S/MR and LR applications is mandatory to reduce production costs. To this aim, a wideband VCO is typically used [12], [13], [14], which relies on a single varactor to cover both LR and S/MR subbands, as shown in the solid line in Fig 5 . Although this approach can guarantee the required TR, it is not suitable to fulfill the PN requirements of LR applications due to the high conversion gain of the varactor (k VCO ). Indeed, the higher k VCO , the worse the PN performance due to a higher AM-to-phase modulation (PM) conversion [15].…”

Section: A Vco Designmentioning

confidence: 99%

A W-Band Transmitter for Automotive Radar Sensors in 28-nm FD-SOI CMOS

Papotto

Parisi

Finocchiaro

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents a 77-GHz transmitter (TX) in a 28-nm fully depleted silicon-on-insulator CMOS technology for automotive radar applications. The circuit has been designed to simultaneously fulfill both short-/medium-range (S/MR) and long-range (LR) operations. It exploits an LO frequency doubling architecture, which allows preventing voltage-controlled oscillator (VCO) pulling effects for improved phase noise (PN) performance. The proposed TX comprises a 38-GHz VCO driving a frequency doubler and then a current-combining two-path power amplifier. The VCO takes advantage of a novel tank architecture to cope S/MR and LR requirements with an effective and silicon area-saving solution. The proposed TX also features a feedback loop that allows properly setting the power delivered to the output load. It exhibits a 5-GHz bandwidth, ranging from 76 to 81 GHz, with a PN performance as low as −93 dBc/Hz at a 1-MHz offset frequency from a 77-GHz carrier. It is also able to deliver a maximum output power as high as 17.5 dBm with a dynamic control range of around 13 dB. The overall power consumption is 351 mW.

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