3510-v 390-mΩ * cm2 4h-sic lateral jfet on a semi-insulating substrate

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

“…Alloyed Ni is commonly used for both in 4H-SiC power devices [37,38], similarity we believe the as-deposited Ti/Ni bilayer proposed here can also be integrated. The low thermal budget of the process demonstrated in this work opens new doors to the application of SiC transistors with other low temperature technologies, including high k dielectrics atomic layer deposited (e.g.…”

(Invited) SiC Lateral MOSFETs Implemented on Semi-Insulating Substrate

“…A number of vertical high voltage devices such as SiC double-implanted MOSFET (DMOSFETs), U-shaped MOSFET (UMOSFETs) and insulated gate bipolar transistor (IGBT) have been demonstrated [4][5][6][7][8][9]. In contrast, not many lateral SiC devices have been investigated, in comparison with the vertical devices [10][11][12][13][14][15]. Recently, there has been increased demand for the development of lateral devices using SiC to integrate high voltage devices and low voltage circuits into a single chip [16].…”

Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

“…[3][4][5][6] In contrast, not many lateral SiC devices have been investigated, in comparison with the vertical devices. [7][8][9][10] Recently, there has been increased demand for the lateral devices, to implement both high voltage power device and low-voltage circuits on a single chip. 11) In general, lateral SiC MOSFETs are fabricated on a SiC epi-layer which was grown on off-axis conducting substrates.…”