Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Abstract

4H-SiC lateral double implanted metal–oxide–semiconductor field effect transistors (LDIMOSFET) were fabricated on on-axis semi-insulating SiC substrates without using an epi-layer. The LDIMOSFET adopted a current path layer (CPL), which was formed by ion-implantation. The CPL works as a drift region between gate and drain. By using on-axis semi-insulating substrate and optimized CPL parameters, breakdown voltage (BV) of 1093 V and specific on-resistance (Ron,sp) of 89.8 mΩ·cm2 were obtained in devices with 20 µm long CPL. Experimentally extracted field-effect channel mobility was 21.7 cm2·V−1·s−1 and the figure-of-merit (BV2/Ron,sp) was 13.3 MW/cm2.

Review of the SiC LDMOS power device

“…Furthermore, the curvature effect demonstrates optimization of the field distribution [69] . Recently, Zhang et al designed a SiC lateral MOSFET power device featuring a circular drift region (Cir-LDMOS) [70] , as shown in Fig. 14.…”

High-voltage LDIMOSFETs on HPSI 4H-SiC substrate with dual field plates

“…We previously demonstrated the electrical characteristics of lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates [20]. The SiC LDIMOSFETs have merits for availability of on-axis SiC substrate and self-isolation by high-resistance substrate between each device.…”

High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

“…In our previous works, we confirmed the basic operation and investigated electrical characteristics depending on doping concentration and length of the N-doped drift region between the gate and the drain in 4H-SiC lateral doubleimplanted MOSFETs (LDIMOSFETs) on on-axis HPSI substrate. 20) In this work, we investigated gate field plate structures on lateral 4H-SiC MOSFETs on on-axis HPSI substrate to improve reverse blocking capability. 21,22) In addition, we evaluated the high-temperature operation under both forward and reverse bias conditions with increasing temperature up to 250 °C.…”

“…20) In this work, we investigated gate field plate structures on lateral 4H-SiC MOSFETs on on-axis HPSI substrate to improve reverse blocking capability. 21,22) In addition, we evaluated the high-temperature operation under both forward and reverse bias conditions with increasing temperature up to 250°C.…”