341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

Smith, Gary A.; Dang, Tuoc; Nelson, Thomas R.; Brown, Jeff L.; Tsvetkov, D.; Usikov, A.; Dmitriev, V.

doi:10.1063/1.1738533

Cited by 19 publications

(14 citation statements)

References 26 publications

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“…[3,4]. To date, although the fabrication of AlGaN template [5], freestanding wafers [6] and device structure [7][8][9] was reported, there are few reports of Al x Ga 1Àx N growth by HVPE [10]. This reason is because HVPE growth of Alcontaining materials such as AlN and AlGaN has been generally thought to be difficult due to the violent reaction between the Al source (AlCl) and the quartz (SiO 2 ) reactor.…”

Section: Introductionmentioning

confidence: 99%

Growth of thick Al Ga1−N ternary alloy by hydride vapor-phase epitaxy

Yamane¹,

Satoh²,

Murakami³

et al. 2007

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth of thick Al Ga1−N ternary alloy by hydride vapor-phase epitaxy

Yamane¹,

Satoh²,

Murakami³

et al. 2007

Journal of Crystal Growth

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“…All-HVPE In-free ultra violet (UV) and violet light emitting diodes have been fabricated [8,9] and are in production.…”

mentioning

confidence: 99%

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

Syrkin¹,

Ivantsov²,

Kovalenkov³

et al. 2008

Phys. Status Solidi (c)

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In this paper we report on first InGaN‐based light emitting structures grown by hydride vapour phase epitaxy (HVPE). InGaN layers and multi layer InGaN/InGaN epitaxial structures were grown on GaN/sapphire template substrates and characterized. InN content in the InGaN layers was varied from 5 to 35 mol.%. Thickness of InGaN layers was controlled from 10 nm to 2 microns. Density of treading dislocations in the InGaN layers was estimated to be in the 109 cm–2 range. X‐ray diffraction measurements and transmission electron microscopy data confirmed a formation of InGaN/InGaN superlattice structures. Light emitting diode epitaxial wafers were fabricated by HVPE deposition of n‐type InGaN layers and multi layer structures on p‐type GaN template substrates. Depending on InN content in the InGaN light emitting regions, peak electroluminescence wavelength varied from 450 to 510 nm. Results of material characterization are reported. Advantages of the proposed upside down LED configuration and future applications of HVPE to grow InGaN layers and structures are discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Indium-free violet light emitting diodes (LEDs) were demonstrated [4]. Ultra violet LEDs and high electron mobility transistors (HEMT) have also been fabricated by HVPE [5,6].…”

mentioning

confidence: 99%

New results on HVPE growth of AlN, GaN, InN and their alloys

Usikov¹,

Soukhoveev²,

Shapovalova³

et al. 2008

Phys. Status Solidi (c)

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A variety of new results on HVPE growth of group III nitride layers and heterostructures are described. Crack free from 10 to 30 μm thick AlN layers were grown on 100‐mm SiC substrates. Bowing of the AlN/SiC wafers was controlled below 10 microns. Low growth rate HVPE with deposition rate below 10 nm/min was demonstrated for GaN, AlN, and AlGaN. This process resulted in the first HVPE grown multi‐quantum wells (MQWs) and superlattices. P‐type as‐grown GaN layers with acceptor concentrations up to 3×1019 cm–3 were demonstrated. InGaN layers from 0.002 to 2 μm thick were grown by HVPE for the whole composition range using c‐plane GaN/sapphire template substrates. Non‐polar InGaN layers were grown on a‐GaN/r‐sapphire templates and m‐plane GaN bulk substrates. Blue and green all‐HVPE LEDs were made utilizing InGaN MQWs grown on p‐GaN/sapphire templates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

Cited by 19 publications

References 26 publications

Growth of thick Al Ga1−N ternary alloy by hydride vapor-phase epitaxy

Growth of thick Al Ga1−N ternary alloy by hydride vapor-phase epitaxy

First all‐HVPE grown InGaN/InGaN MQW LED structures for 460‐510 nm

New results on HVPE growth of AlN, GaN, InN and their alloys

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